Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

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Alkuperäiskieli	Englanti
Julkaisupaikka	Forth Myers, Florida
Sivut	s.
Tila	Julkaistu - 1995
OKM-julkaisutyyppi	D4 Julkaistut kehitykset tai tutkimusraportit tai tutkimukset

Tutkimusalat

@techreport{991775c8b7744bdcb782ff36ba2b6047,

title = "Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.",

keywords = "quantum dots, III-V semiconductors, quantum dots, III-V semiconductors, quantum dots, III-V semiconductors",

author = "M. Sopanen and H. Lipsanen and J. Ahopelto",

year = "1995",

language = "English",

pages = "s.",

type = "WorkingPaper",

}

TY - UNPB

T1 - Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Ahopelto, J.

PY - 1995

Y1 - 1995

KW - quantum dots, III-V semiconductors

M3 - Working paper

SP - s.

BT - Self-organized growth of InP islands on GaAs for the fabrication of strain-induced quantum dots.

CY - Forth Myers, Florida

ER -