Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE

K. Yu Shubina, A. M. Mizerov, S. N. Timoshnev, D. V. Mokhov, E. V. Nikitina, I. Kim, A. D. Bouravleuv

Tutkimustuotos: LehtiartikkeliConference articleScientificvertaisarvioitu

83 Lataukset (Pure)

Abstrakti

The n+-GaN epilayers were synthesised by PA MBE on the SiO2 patterned GaN/c-Al2O3 templates, grown by MOCVD. Formation of the polycrystalline GaN atop of the SiO2 mask during PA MBE was observed. It was found that macroscopic voids at the interface polycrystalline GaN/SiO2/n-GaN template appeared during the PA MBE process. The polycrystalline GaN film was completely removed by etching in hot aqueous KOH solution. Hall measurements have shown that the value of electron concentration in n+-GaN contact layer is about ne∼4.6×1019 cm-3.

AlkuperäiskieliEnglanti
Artikkeli012014
JulkaisuJournal of Physics: Conference Series
Vuosikerta1410
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 20 jouluk. 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisussa
TapahtumaInternational School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures - Saint Petersburg, Venäjä
Kesto: 22 huhtik. 201925 huhtik. 2019
Konferenssinumero: 6

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