Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure

Eero Haimi*, Oili Ylivaara, Jihong Yim, Riikka Puurunen

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

14 Lataukset (Pure)

Abstrakti

Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio silicon test structures. The leading front of the film thickness profile is of interest, since it is related to deposition kinetics and provides information for ALD process development. A deposited profile was characterized using energy-dispersive electron probe X-ray microanalysis (ED-EPMA) and the results were analyzed using Monte Carlo simulation. A new procedure for obtaining relative film thickness profile from X-ray microanalysis data is described. From the obtained relative thickness profile, penetration depth of film at 50% of initial thickness and corresponding slope of thickness profile were determined at the saturation front. Comparison of the developed procedure was performed against independent measurements using optical reflectometry. ED-EPMA characterization of saturation profiles on lateral high-aspect-ratio test structures, supported by Monte Carlo simulation, is expected to prove useful tool for ALD process development.
AlkuperäiskieliEnglanti
Artikkeli100102
Sivumäärä5
JulkaisuApplied Surface Science Advances
Vuosikerta5
Varhainen verkossa julkaisun päivämäärä25 toukokuuta 2021
DOI - pysyväislinkit
TilaJulkaistu - 1 syyskuuta 2021
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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