Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities

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Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities. / Coelho, Paula Mariel; Komsa, Hannu Pekka; Lasek, Kinga; Kalappattil, Vijaysankar; Karthikeyan, Jeyakumar; Phan, Manh Huong; Krasheninnikov, Arkady V.; Batzill, Matthias.

julkaisussa: Advanced Electronic Materials, Vuosikerta 5, Nro 5, 1900044, 01.05.2019, s. 1-6.

Tutkimustuotos: Lehtiartikkeli

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Coelho, Paula Mariel ; Komsa, Hannu Pekka ; Lasek, Kinga ; Kalappattil, Vijaysankar ; Karthikeyan, Jeyakumar ; Phan, Manh Huong ; Krasheninnikov, Arkady V. ; Batzill, Matthias. / Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities. Julkaisussa: Advanced Electronic Materials. 2019 ; Vuosikerta 5, Nro 5. Sivut 1-6.

Bibtex - Lataa

@article{caf66de16659407c8d4946d53c7e4998,
title = "Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities",
abstract = "Post-synthesis doping of 2D materials is demonstrated by incorporation of vapor-deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H-MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2{\%}. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.",
keywords = "2D materials, diluted ferromagnet, dopants, impurities, magnetism, MoTe",
author = "Coelho, {Paula Mariel} and Komsa, {Hannu Pekka} and Kinga Lasek and Vijaysankar Kalappattil and Jeyakumar Karthikeyan and Phan, {Manh Huong} and Krasheninnikov, {Arkady V.} and Matthias Batzill",
year = "2019",
month = "5",
day = "1",
doi = "10.1002/aelm.201900044",
language = "English",
volume = "5",
pages = "1--6",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley",
number = "5",

}

RIS - Lataa

TY - JOUR

T1 - Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities

AU - Coelho, Paula Mariel

AU - Komsa, Hannu Pekka

AU - Lasek, Kinga

AU - Kalappattil, Vijaysankar

AU - Karthikeyan, Jeyakumar

AU - Phan, Manh Huong

AU - Krasheninnikov, Arkady V.

AU - Batzill, Matthias

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Post-synthesis doping of 2D materials is demonstrated by incorporation of vapor-deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H-MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.

AB - Post-synthesis doping of 2D materials is demonstrated by incorporation of vapor-deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H-MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.

KW - 2D materials

KW - diluted ferromagnet

KW - dopants

KW - impurities

KW - magnetism

KW - MoTe

UR - http://www.scopus.com/inward/record.url?scp=85063671231&partnerID=8YFLogxK

U2 - 10.1002/aelm.201900044

DO - 10.1002/aelm.201900044

M3 - Article

VL - 5

SP - 1

EP - 6

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 5

M1 - 1900044

ER -

ID: 33040409