Room-Temperature Ferromagnetism in MoTe 2 by Post-Growth Incorporation of Vanadium Impurities

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • University of South Florida
  • Institute of Resource Ecology

Kuvaus

Post-synthesis doping of 2D materials is demonstrated by incorporation of vapor-deposited transition metals into a MoTe 2 lattice. Using this approach, vanadium doping of 2H-MoTe 2 produces a 2D ferromagnetic semiconductor with a Curie temperature above room temperature (RT). Surprisingly, ferromagnetic properties can be induced with very low vanadium concentrations, down to ≈0.2%. The vanadium species introduced at RT are metastable, and annealing to above ≈500 K results in the formation of a thermodynamically favored impurity configuration that, however, exhibits reduced ferromagnetic properties. Doping with titanium, instead of vanadium, shows a similar incorporation behavior, but no ferromagnetism is induced in MoTe 2 . This indicates that the type of impurities in addition to their atomic configuration is responsible for the induced magnetism. The interpretation of the experimental results is consistent with ab initio calculations, which confirm that the proposed vanadium impurity configurations exhibit magnetic moments, in contrast to the same configurations with titanium impurities. This study illustrates the possibility to induce ferromagnetic properties in layered van der Waals semiconductors by controlled magnetic impurity doping and thus to add magnetic functionalities to 2D materials.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli1900044
Sivut1-6
Sivumäärä6
JulkaisuAdvanced Electronic Materials
Vuosikerta5
Numero5
TilaJulkaistu - 1 toukokuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 33040409