Room-Temperature Plasticity of a Nanosized GaN Crystal

Masaki Fujikane; Shijo Nagao; Dariusz Chrobak; Toshiya Yokogawa; Roman Nowak

doi:10.1021/acs.nanolett.1c00773

Room-Temperature Plasticity of a Nanosized GaN Crystal

Masaki Fujikane^*, Shijo Nagao, Dariusz Chrobak, Toshiya Yokogawa, Roman Nowak

^*Tämän työn vastaava kirjoittaja

Kemian ja materiaalitieteen laitos

Tutkimustuotos: Lehtiartikkeli › Letter › Scientific › vertaisarvioitu

10 Sitaatiot (Scopus)

117 Lataukset (Pure)

Abstrakti

GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates that nanodeconfined GaN compressed along the M direction begins to exhibit room-temperature plasticity, yielding a dislocation-free structure despite the occurrence of considerable, irreversible deformation. Our interest in M-oriented, strained GaN nanoobjects was sparked by the results of first-principles bandgap calculations, whereas subsequent nanomechanical tests and ultrahigh-voltage (1250 kV) transmission electron microscopy observations confirmed the authenticity of the phenomenon. Moreover, identical experiments along the C direction produced only a quasi-brittle response. Precisely how this happens is demonstrated by molecular dynamics simulations of the deformation of the C- and M-oriented GaN frustum, which mirror our nanopillar crystals.

Alkuperäiskieli	Englanti
Sivut	6425–6431
Sivumäärä	7
Julkaisu	Nano Letters
Vuosikerta	21
Numero	15
Varhainen verkossa julkaisun päivämäärä	27 heinäk. 2021
DOI - pysyväislinkit	https://doi.org/10.1021/acs.nanolett.1c00773
Tila	Julkaistu - 11 elok. 2021
OKM-julkaisutyyppi	B1 Kirjoitus tieteellisessä aikakauslehdessä

Rahoitus

We gratefully acknowledge Prof. Shuji Nakamura (University of California, Santa Barbara) for his invaluable criticism, stimulating comments. and important suggestions. Equally appreciated are the observations and remarks by Prof. William D. Nix (Stanford University). R.N. acknowledges invaluable discussions with Prof. Toshihiro Shimada (Hokkaido University) and his role in ascertaining the quality of the nanopillars used in our experiments. R.N. also expresses appreciation to Prof Koichi Niihara and Prof. Hisayuki Suematsu (Nagaoka University of Technology) as well as to Mr. Michael Berg (Bruker Nano Surfaces, Los Angeles) for their long-standing support and many an eye-opener. MF is thankful to Mr. Hideki Hata and Tomohiko Ueda (Panasonic Corp.) for rewarding discussions concerning TEM observations. Finally, R.N. and D.C. acknowledge the support from Osaka University and Nagaoka University of Technology during their time as guest-scholars. This research was sponsored by Panasonic Corp., Japan, as part of cooperation with Japanese universities.

Pääsy asiakirjaan

10.1021/acs.nanolett.1c00773Lisenssi: CC BY

CHEM_Fujikane_et_al_Room-Temperature_Plasticity_2021_Nano_LettersFinal published version, 3,96 MBLisenssi: CC BY

Muut tiedostot ja linkit

Linkki julkaisuun Scopuksessa

Siteeraa tätä

@article{7bf863776270455fa0f80fcee68ad608,

title = "Room-Temperature Plasticity of a Nanosized GaN Crystal",

abstract = "GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates that nanodeconfined GaN compressed along the M direction begins to exhibit room-temperature plasticity, yielding a dislocation-free structure despite the occurrence of considerable, irreversible deformation. Our interest in M-oriented, strained GaN nanoobjects was sparked by the results of first-principles bandgap calculations, whereas subsequent nanomechanical tests and ultrahigh-voltage (1250 kV) transmission electron microscopy observations confirmed the authenticity of the phenomenon. Moreover, identical experiments along the C direction produced only a quasi-brittle response. Precisely how this happens is demonstrated by molecular dynamics simulations of the deformation of the C- and M-oriented GaN frustum, which mirror our nanopillar crystals. ",

keywords = "ab initio calculations, GaN nanocrystals, MD-simulations, nanoscale compression, plasticity, ultrahigh voltage electron microscopy",

author = "Masaki Fujikane and Shijo Nagao and Dariusz Chrobak and Toshiya Yokogawa and Roman Nowak",

note = "Funding Information: We gratefully acknowledge Prof. Shuji Nakamura (University of California, Santa Barbara) for his invaluable criticism, stimulating comments. and important suggestions. Equally appreciated are the observations and remarks by Prof. William D. Nix (Stanford University). R.N. acknowledges invaluable discussions with Prof. Toshihiro Shimada (Hokkaido University) and his role in ascertaining the quality of the nanopillars used in our experiments. R.N. also expresses appreciation to Prof Koichi Niihara and Prof. Hisayuki Suematsu (Nagaoka University of Technology) as well as to Mr. Michael Berg (Bruker Nano Surfaces, Los Angeles) for their long-standing support and many an eye-opener. MF is thankful to Mr. Hideki Hata and Tomohiko Ueda (Panasonic Corp.) for rewarding discussions concerning TEM observations. Finally, R.N. and D.C. acknowledge the support from Osaka University and Nagaoka University of Technology during their time as guest-scholars. This research was sponsored by Panasonic Corp., Japan, as part of cooperation with Japanese universities. Publisher Copyright: {\textcopyright} ",

year = "2021",

month = aug,

day = "11",

doi = "10.1021/acs.nanolett.1c00773",

language = "English",

volume = "21",

pages = "6425–6431",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "15",

}

TY - JOUR

T1 - Room-Temperature Plasticity of a Nanosized GaN Crystal

AU - Fujikane, Masaki

AU - Nagao, Shijo

AU - Chrobak, Dariusz

AU - Yokogawa, Toshiya

AU - Nowak, Roman

N1 - Funding Information: We gratefully acknowledge Prof. Shuji Nakamura (University of California, Santa Barbara) for his invaluable criticism, stimulating comments. and important suggestions. Equally appreciated are the observations and remarks by Prof. William D. Nix (Stanford University). R.N. acknowledges invaluable discussions with Prof. Toshihiro Shimada (Hokkaido University) and his role in ascertaining the quality of the nanopillars used in our experiments. R.N. also expresses appreciation to Prof Koichi Niihara and Prof. Hisayuki Suematsu (Nagaoka University of Technology) as well as to Mr. Michael Berg (Bruker Nano Surfaces, Los Angeles) for their long-standing support and many an eye-opener. MF is thankful to Mr. Hideki Hata and Tomohiko Ueda (Panasonic Corp.) for rewarding discussions concerning TEM observations. Finally, R.N. and D.C. acknowledge the support from Osaka University and Nagaoka University of Technology during their time as guest-scholars. This research was sponsored by Panasonic Corp., Japan, as part of cooperation with Japanese universities. Publisher Copyright: ©

PY - 2021/8/11

Y1 - 2021/8/11

N2 - GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates that nanodeconfined GaN compressed along the M direction begins to exhibit room-temperature plasticity, yielding a dislocation-free structure despite the occurrence of considerable, irreversible deformation. Our interest in M-oriented, strained GaN nanoobjects was sparked by the results of first-principles bandgap calculations, whereas subsequent nanomechanical tests and ultrahigh-voltage (1250 kV) transmission electron microscopy observations confirmed the authenticity of the phenomenon. Moreover, identical experiments along the C direction produced only a quasi-brittle response. Precisely how this happens is demonstrated by molecular dynamics simulations of the deformation of the C- and M-oriented GaN frustum, which mirror our nanopillar crystals.

AB - GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates that nanodeconfined GaN compressed along the M direction begins to exhibit room-temperature plasticity, yielding a dislocation-free structure despite the occurrence of considerable, irreversible deformation. Our interest in M-oriented, strained GaN nanoobjects was sparked by the results of first-principles bandgap calculations, whereas subsequent nanomechanical tests and ultrahigh-voltage (1250 kV) transmission electron microscopy observations confirmed the authenticity of the phenomenon. Moreover, identical experiments along the C direction produced only a quasi-brittle response. Precisely how this happens is demonstrated by molecular dynamics simulations of the deformation of the C- and M-oriented GaN frustum, which mirror our nanopillar crystals.

KW - ab initio calculations

KW - GaN nanocrystals

KW - MD-simulations

KW - nanoscale compression

KW - plasticity

KW - ultrahigh voltage electron microscopy

UR - https://www.scopus.com/pages/publications/85112498604

U2 - 10.1021/acs.nanolett.1c00773

DO - 10.1021/acs.nanolett.1c00773

M3 - Letter

AN - SCOPUS:85112498604

SN - 1530-6984

VL - 21

SP - 6425

EP - 6431

JO - Nano Letters

JF - Nano Letters

IS - 15

ER -

Room-Temperature Plasticity of a Nanosized GaN Crystal

Abstrakti

Rahoitus

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Siteeraa tätä