Robust Magnetoelectric Effect in the Decorated Graphene/In2Se3Heterostructure

Jing Shang, Xiao Tang, Yuantong Gu, Arkady V. Krasheninnikov, Silvia Picozzi, Changfeng Chen, Liangzhi Kou*

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

The magnetoelectric effect is a fundamental physical phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM)-decorated graphene layer via a ferroelectrically induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon-p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in the TM-decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of ferroelectrically controlled magnetism in two-dimensional (2D) materials.

AlkuperäiskieliEnglanti
Sivut3033-3039
Sivumäärä7
JulkaisuACS Applied Materials and Interfaces
Vuosikerta13
Numero2
Varhainen verkossa julkaisun päivämäärä2021
DOI - pysyväislinkit
TilaJulkaistu - 20 tammikuuta 2021
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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