Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures

Cui Jin; Xiao Tang; Qilong Sun; Chenxi Mu; Arkady V. Krasheninnikov; Liangzhi Kou

doi:10.1021/acs.jpclett.4c00029

Robust Magnetoelectric Coupling in FeTiO₃/Ga₂O₃ Non-van der Waals Heterostructures

Cui Jin, Xiao Tang, Qilong Sun, Chenxi Mu, Arkady V. Krasheninnikov, Liangzhi Kou^*

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

5 Sitaatiot (Scopus)

Abstrakti

Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO₃ monolayer with the ferroelectric (FE) Ga₂O₃. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO₃ monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga₂O₃ monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

Alkuperäiskieli	Englanti
Sivut	2650-2657
Sivumäärä	8
Julkaisu	Journal of Physical Chemistry Letters
Vuosikerta	15
Numero	10
Varhainen verkossa julkaisun päivämäärä	2024
DOI - pysyväislinkit	https://doi.org/10.1021/acs.jpclett.4c00029
Tila	Julkaistu - 14 maalisk. 2024
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

Rahoitus

We acknowledge the grants of high-performance computer time from the computing facility at the Queensland University of Technology, the Pawsey Supercomputing Centre, and Australian National Facility. C.J. gratefully acknowledges the financial support of the Natural Science Foundation of Shandong Province under Grant No. ZR2020QA056 and the Development Plan of Youth Innovation Team of University in Shandong Province under Grant No. 2022KJ200. L.K. gratefully acknowledges financial support by the ARC Discovery Project (DP230101904).

Pääsy asiakirjaan

10.1021/acs.jpclett.4c00029

https://www.hzdr.de/publications/Publ-39035

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title = "Robust Magnetoelectric Coupling in FeTiO3/Ga2O3 Non-van der Waals Heterostructures",

abstract = "Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.",

author = "Cui Jin and Xiao Tang and Qilong Sun and Chenxi Mu and Krasheninnikov, \{Arkady V.\} and Liangzhi Kou",

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AU - Jin, Cui

AU - Tang, Xiao

AU - Sun, Qilong

AU - Mu, Chenxi

AU - Krasheninnikov, Arkady V.

AU - Kou, Liangzhi

PY - 2024/3/14

Y1 - 2024/3/14

N2 - Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

AB - Magnetoelectric coupling represents a significant breakthrough for next-generation electronics, offering the ability to achieve nonvolatile magnetic control via electrical means. In this comprehensive investigation, leveraging first-principles calculations, we unveil a robust magnetoelectric coupling within multiferroic heterostructures (HSs) by ingeniously integrating a non-van der Waals (non-vdW) magnetic FeTiO3 monolayer with the ferroelectric (FE) Ga2O3. Diverging from conventional van der Waals (vdW) multiferroic HSs, the magnetic states of the FeTiO3 monolayer can be efficiently toggled between ferromagnetic (FM) and antiferromagnetic (AFM) configurations by reversing the polarization of the Ga2O3 monolayer. This intriguing phenomenon arises from polarization-dependent substantial interlayer electron transfers and the interplay between superexchange and direct-exchange magnetic couplings of the iron atoms. The carrier-mediated interfacial interactions induce crucial shifts in Fermi level positions, decisively imparting distinct electronic characteristics near the Fermi level of composite systems. These novel findings offer exciting prospects for the future of magnetoelectric technology.

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