Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Philipp Valerius
  • Silvan Kretschmer
  • Boris V. Senkovskiy
  • Shilong Wu
  • Joshua Hall
  • Alexander Herman
  • Niels Ehlen
  • Mahdi Ghorbani-Asl
  • Alexander Grueneis
  • Arkady V. Krasheninnikov
  • Thomas Michely

Organisaatiot

  • Helmholtz Zentrum Dresden Rossendorf, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Helmholtz Association, Inst Ion Beam Phys & Mat Res
  • Univ Duisburg Essen, University of Duisburg Essen, Fak Phys
  • University of Cologne

Kuvaus

By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS2 to 500 eV Xe+ irradiation is obtained. The MoS2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of ions cm(-2) and without inducing damage underneath the MoS2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli025005
Sivumäärä11
Julkaisu2D Materials
Vuosikerta7
Numero2
TilaJulkaistu - huhtikuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 40548650