Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation

Philipp Valerius*, Silvan Kretschmer, Boris V. Senkovskiy, Shilong Wu, Joshua Hall, Alexander Herman, Niels Ehlen, Mahdi Ghorbani-Asl, Alexander Grueneis, Arkady V. Krasheninnikov, Thomas Michely

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

Abstrakti

By combining scanning tunneling microscopy, low-energy electron diffraction, photoluminescence and Raman spectroscopy experiments with molecular dynamics simulations, a comprehensive picture of the structural and electronic response of a monolayer of MoS2 to 500 eV Xe+ irradiation is obtained. The MoS2 layer is epitaxially grown on graphene/Ir(1 1 1) and analyzed before and after irradiation in situ under ultra-high vacuum conditions. Through optimized irradiation conditions using low-energy ions with grazing trajectories, amorphization of the monolayer is induced already at low ion fluences of ions cm(-2) and without inducing damage underneath the MoS2 layer. The crystalline-to-amorphous transformation is accompanied by changes in the electronic properties from semiconductor-to-metal and an extinction of photoluminescence. Upon thermal annealing, the re-crystallization occurs with restoration of the semiconducting properties, but residual defects prevent the recovery of photoluminescence.

AlkuperäiskieliEnglanti
Artikkeli025005
Sivumäärä11
Julkaisu2D Materials
Vuosikerta7
Numero2
DOI - pysyväislinkit
TilaJulkaistu - huhtikuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Siteeraa tätä

Valerius, P., Kretschmer, S., Senkovskiy, B. V., Wu, S., Hall, J., Herman, A., ... Michely, T. (2020). Reversible crystalline-to-amorphous phase transformation in monolayer MoS2 under grazing ion irradiation. 2D Materials, 7(2), [025005]. https://doi.org/10.1088/2053-1583/ab5df4