Resonant features of the terahertz generation in semiconductor nanowires

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Resonant features of the terahertz generation in semiconductor nanowires. / Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A.; Cirlin, G. E.; Kuritsyn, D. I.; Rumyantsev, V. V.; Morosov, S. V.; Kakko, J. P.; Huhtio, T.; Lipsanen, H.

julkaisussa: Semiconductors, Vuosikerta 50, Nro 12, 01.12.2016, s. 1561-1565.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Trukhin, VN, Bouravleuv, AD, Mustafin, IA, Cirlin, GE, Kuritsyn, DI, Rumyantsev, VV, Morosov, SV, Kakko, JP, Huhtio, T & Lipsanen, H 2016, 'Resonant features of the terahertz generation in semiconductor nanowires', Semiconductors, Vuosikerta. 50, Nro 12, Sivut 1561-1565. https://doi.org/10.1134/S1063782616120241

APA

Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Cirlin, G. E., Kuritsyn, D. I., Rumyantsev, V. V., ... Lipsanen, H. (2016). Resonant features of the terahertz generation in semiconductor nanowires. Semiconductors, 50(12), 1561-1565. https://doi.org/10.1134/S1063782616120241

Vancouver

Trukhin VN, Bouravleuv AD, Mustafin IA, Cirlin GE, Kuritsyn DI, Rumyantsev VV et al. Resonant features of the terahertz generation in semiconductor nanowires. Semiconductors. 2016 joulu 1;50(12):1561-1565. https://doi.org/10.1134/S1063782616120241

Author

Trukhin, V. N. ; Bouravleuv, A. D. ; Mustafin, I. A. ; Cirlin, G. E. ; Kuritsyn, D. I. ; Rumyantsev, V. V. ; Morosov, S. V. ; Kakko, J. P. ; Huhtio, T. ; Lipsanen, H. / Resonant features of the terahertz generation in semiconductor nanowires. Julkaisussa: Semiconductors. 2016 ; Vuosikerta 50, Nro 12. Sivut 1561-1565.

Bibtex - Lataa

@article{691f65c65cd64bc88fa8a74b231ba3a6,
title = "Resonant features of the terahertz generation in semiconductor nanowires",
abstract = "The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.",
author = "Trukhin, {V. N.} and Bouravleuv, {A. D.} and Mustafin, {I. A.} and Cirlin, {G. E.} and Kuritsyn, {D. I.} and Rumyantsev, {V. V.} and Morosov, {S. V.} and Kakko, {J. P.} and T. Huhtio and H. Lipsanen",
year = "2016",
month = "12",
day = "1",
doi = "10.1134/S1063782616120241",
language = "English",
volume = "50",
pages = "1561--1565",
journal = "Semiconductors",
issn = "1063-7826",
number = "12",

}

RIS - Lataa

TY - JOUR

T1 - Resonant features of the terahertz generation in semiconductor nanowires

AU - Trukhin, V. N.

AU - Bouravleuv, A. D.

AU - Mustafin, I. A.

AU - Cirlin, G. E.

AU - Kuritsyn, D. I.

AU - Rumyantsev, V. V.

AU - Morosov, S. V.

AU - Kakko, J. P.

AU - Huhtio, T.

AU - Lipsanen, H.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

AB - The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

UR - http://www.scopus.com/inward/record.url?scp=85010038862&partnerID=8YFLogxK

U2 - 10.1134/S1063782616120241

DO - 10.1134/S1063782616120241

M3 - Article

VL - 50

SP - 1561

EP - 1565

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 10712054