Residual stress study of thin films deposited by atomic layer deposition

Zhen Zhu; Emma Salmi; Sauli Virtanen

doi:10.1109/ASICON.2017.8252455

Residual stress study of thin films deposited by atomic layer deposition

Zhen Zhu, Emma Salmi, Sauli Virtanen

Beneq Oy

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

5 Sitaatiot (Scopus)

Abstrakti

Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al₂O₃ and Al₂O₃/TiO₂ laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al₂O₃ and Al₂O₃/TiO₂ laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

Alkuperäiskieli	Englanti
Otsikko	Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
Kustantaja	IEEE
Sivut	233-236
Sivumäärä	4
Vuosikerta	2017-October
ISBN (elektroninen)	9781509066247
DOI - pysyväislinkit	https://doi.org/10.1109/ASICON.2017.8252455
Tila	Julkaistu - 8 tammik. 2018
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	IEEE International Conference on Advanced Semiconductor Integrated Circuits - Guiyang, Kiina Kesto: 25 lokak. 2017 → 28 lokak. 2017 Konferenssinumero: 12

Conference

Conference	IEEE International Conference on Advanced Semiconductor Integrated Circuits
Lyhennettä	ASICON
Maa/Alue	Kiina
Kaupunki	Guiyang
Ajanjakso	25/10/2017 → 28/10/2017

Pääsy asiakirjaan

10.1109/ASICON.2017.8252455

Muut tiedostot ja linkit

Link to publication in Scopus

Siteeraa tätä

@inproceedings{e3b3780f1618411ca778274ec714a059,

title = "Residual stress study of thin films deposited by atomic layer deposition",

abstract = "Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.",

author = "Zhen Zhu and Emma Salmi and Sauli Virtanen",

year = "2018",

month = jan,

day = "8",

doi = "10.1109/ASICON.2017.8252455",

language = "English",

volume = "2017-October",

pages = "233--236",

booktitle = "Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017",

publisher = "IEEE",

address = "United States",

note = "IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON ; Conference date: 25-10-2017 Through 28-10-2017",

}

Zhu, Z, Salmi, E & Virtanen, S 2018, Residual stress study of thin films deposited by atomic layer deposition. julkaisussa Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Vuosikerta 2017-October, IEEE, Sivut 233-236, IEEE International Conference on Advanced Semiconductor Integrated Circuits, Guiyang, Kiina, 25/10/2017. https://doi.org/10.1109/ASICON.2017.8252455

Residual stress study of thin films deposited by atomic layer deposition. / Zhu, Zhen; Salmi, Emma; Virtanen, Sauli.
Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Vuosikerta 2017-October IEEE, 2018. s. 233-236.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Residual stress study of thin films deposited by atomic layer deposition

AU - Zhu, Zhen

AU - Salmi, Emma

AU - Virtanen, Sauli

N1 - Conference code: 12

PY - 2018/1/8

Y1 - 2018/1/8

N2 - Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

AB - Atomic layer deposition (ALD) has been widely used in microelectromechanical systems (MEMS) due to its unique advantages, e.g. precise film thickness control, high uniformity and superb conformality. The understanding of ALD film's mechanical properties is important for MEMS device design and fabrication. In this work, the studied thin films (Al2O3 and Al2O3/TiO2 laminates) were deposited by thermal ALD (THALD) and plasma-enhanced ALD (PEALD). The film growth behavior was determined by ellipsometry, and the residual stress was analyzed by wafer curvature measurements. We extracted a low residual stress near 100 MPa for Al2O3 and Al2O3/TiO2 laminates. A clear correlation was found between the film's process conditions (parameters and configurations) and residual stress.

UR - http://www.scopus.com/inward/record.url?scp=85044792768&partnerID=8YFLogxK

U2 - 10.1109/ASICON.2017.8252455

DO - 10.1109/ASICON.2017.8252455

M3 - Conference article in proceedings

AN - SCOPUS:85044792768

VL - 2017-October

SP - 233

EP - 236

BT - Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017

PB - IEEE

T2 - IEEE International Conference on Advanced Semiconductor Integrated Circuits

Y2 - 25 October 2017 through 28 October 2017

ER -

Residual stress study of thin films deposited by atomic layer deposition

Abstrakti

Conference

Pääsy asiakirjaan

Muut tiedostot ja linkit

Sormenjälki

Siteeraa tätä