Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Riikka L. Puurunen

doi:10.1063/1.1943503

Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

Riikka L. Puurunen

Ei julkaistu Aalto-yliopiston affiliaatiolla

Tutkimustuotos: Lehtiartikkeli › Comment/debate › Scientific › vertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.

Alkuperäiskieli	Englanti
Artikkeli	016102
Sivut	1-2
Julkaisu	Journal of Applied Physics
Vuosikerta	98
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1063/1.1943503
Tila	Julkaistu - 1 heinäk. 2005
OKM-julkaisutyyppi	B1 Kirjoitus tieteellisessä aikakauslehdessä

Pääsy asiakirjaan

10.1063/1.1943503

Siteeraa tätä

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title = "Reply to {"}Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' {"} [J. Appl. Phys. 95, 477 (2204)]",

abstract = "This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.",

author = "Puurunen, {Riikka L.}",

year = "2005",

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doi = "10.1063/1.1943503",

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Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]. / Puurunen, Riikka L.
julkaisussa: Journal of Applied Physics, Vuosikerta 98, Nro 1, 016102, 01.07.2005, s. 1-2.

Tutkimustuotos: Lehtiartikkeli › Comment/debate › Scientific › vertaisarvioitu

TY - JOUR

T1 - Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

AU - Puurunen, Riikka L.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.

AB - This response addresses the comments of Alam and Green [J. Appl. Phys. 98, 016101 (2005)] on my article [J. Appl. Phys. 95, 4777 (2004)]. All comments were related to their model [J. Appl. Phys. 94, 3403 (2003)], which I used as a tool for analyzing the origin of substrate-inhibited growth in atomic layer deposition.

U2 - 10.1063/1.1943503

DO - 10.1063/1.1943503

M3 - Comment/debate

AN - SCOPUS:22944458210

SN - 0021-8979

VL - 98

SP - 1

EP - 2

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 016102

ER -

Reply to "Comment on 'Analysis of hydroxyl group controlled atomic layer deposition of hafnium oxide from hafnium tetrachloride and water' " [J. Appl. Phys. 95, 477 (2204)]

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