Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry

Tutkimustuotos: Lehtiartikkeli

Tutkijat

  • E. Chávez-Ángel
  • J. S. Reparaz
  • J. Gomis-Bresco
  • M. R. Wagner
  • J. Cuffe
  • B. Graczykowski
  • A. Shchepetov
  • Hua Jiang

  • M. Prunnila
  • J. Ahopelto
  • F. Alzina
  • C. M. Sotomayor Torres

Organisaatiot

  • Autonomous University of Barcelona
  • VTT Technical Research Centre of Finland
  • ICREA
  • ICN2-Institut Catala de Nanociencia i Nanotecnologia
  • Massachusetts Institute of Technology

Kuvaus

We report on the reduction of the thermal conductivity in ultra-thin suspended Si membranes with high crystalline quality. A series of membranes with thicknesses ranging from 9 nm to 1.5 μm was investigated using Raman thermometry, a novel contactless technique for thermal conductivity determination. A systematic decrease in the thermal conductivity was observed as reducing the thickness, which is explained using the Fuchs-Sondheimer model through the influence of phonon boundary scattering at the surfaces. The thermal conductivity of the thinnest membrane with d = 9 nm resulted in (9 ± 2) W/mK, thus approaching the amorphous limit but still maintaining a high crystalline quality.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli012113
Sivut1-6
JulkaisuAPL Materials
Vuosikerta2
Numero1
TilaJulkaistu - 2014
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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