Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

Lauri Riuttanen; Pyry Kivisaari; Nikolai Mäntyoja; Jani Oksanen; Muhammad Ali; Sami Suihkonen; Markku Sopanen

doi:10.1002/pssc.201200670

Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

Lauri Riuttanen, Pyry Kivisaari, Nikolai Mäntyoja, Jani Oksanen, Muhammad Ali, Sami Suihkonen, Markku Sopanen

Markku Sopanen Group

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

11 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Sivut	327-331
Julkaisu	PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS
Vuosikerta	10
Numero	3
DOI - pysyväislinkit	https://doi.org/10.1002/pssc.201200670
Tila	Julkaistu - 2013
OKM-julkaisutyyppi	A1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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10.1002/pssc.201200670

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Rissanen, A. (Manager)
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Laitteistot/tilat: Facility

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@article{8a9078d3e0e84bd2a2ae84e40a512e4f,

title = "Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis",

author = "Lauri Riuttanen and Pyry Kivisaari and Nikolai M{\"a}ntyoja and Jani Oksanen and Muhammad Ali and Sami Suihkonen and Markku Sopanen",

year = "2013",

doi = "10.1002/pssc.201200670",

language = "English",

volume = "10",

pages = "327--331",

journal = "PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS",

issn = "1862-6351",

publisher = "Wiley",

number = "3",

}

Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis. / Riuttanen, Lauri; Kivisaari, Pyry; Mäntyoja, Nikolai et al.
julkaisussa: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, Vuosikerta 10, Nro 3, 2013, s. 327-331.

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

TY - JOUR

T1 - Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

AU - Riuttanen, Lauri

AU - Kivisaari, Pyry

AU - Mäntyoja, Nikolai

AU - Oksanen, Jani

AU - Ali, Muhammad

AU - Suihkonen, Sami

AU - Sopanen, Markku

PY - 2013

Y1 - 2013

U2 - 10.1002/pssc.201200670

DO - 10.1002/pssc.201200670

M3 - Article

SN - 1862-6351

VL - 10

SP - 327

EP - 331

JO - PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS

JF - PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS

IS - 3

ER -

Recombination lifetime in InGaN/GaN based light emitting diodes at low current densities by differential carrier lifetime analysis

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