Rate-selected growth of ultrapure semiconducting carbon nanotube arrays

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Zhenxing Zhu
  • Nan Wei

  • Weijun Cheng
  • Boyuan Shen
  • Silei Sun
  • Jun Gao
  • Qian Wen
  • Rufan Zhang
  • Jun Xu
  • Yao Wang
  • Fei Wei

Organisaatiot

  • Tsinghua University

Kuvaus

Carbon nanotubes (CNTs) are promising candidates for smart electronic devices. However, it is challenging to mediate their bandgap or chirality from a vapor-liquid-solid growth process. Here, we demonstrate rate-selected semiconducting CNT arrays based on interlocking between the atomic assembly rate and bandgap of CNTs. Rate analysis confirms the Schulz-Flory distribution which leads to various decay rates as length increases in metallic and semiconducting CNTs. Quantitatively, a nearly ten-fold faster decay rate of metallic CNTs leads to a spontaneous purification of the predicted 99.9999% semiconducting CNTs at a length of 154 mm, and the longest CNT can be 650 mm through an optimized reactor. Transistors fabricated on them deliver a high current of 14 μA μm-1 with on/off ratio around 108 and mobility over 4000 cm2 V-1 s-1. Our rate-selected strategy offers more freedom to control the CNT purity in-situ and offers a robust methodology to synthesize perfectly assembled nanotubes over a long scale.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut1-8
JulkaisuNature Communications
Vuosikerta10
Numero1
TilaJulkaistu - 2 lokakuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 37819317