Pressure-mediated contact quality improvement between monolayer MoS 2 and graphite

Mengzhou Liao, Luojun Du, Tingting Zhang, Lin Gu, Yugui Yao, Rong Yang, Dongxia Shi*, Guangyu Zhang

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

1 Sitaatiot (Scopus)

Abstrakti

Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS 2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS 2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS 2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS 2 is significantly improved. This pressure-mediated contact quality improvement between MoS 2 and graphite comes from the enhanced charge transfer between MoS 2 and graphite when MoS 2 is stretched. Our results provide a new way to enhance the contact quality between MoS 2 and graphite for further applications.

AlkuperäiskieliEnglanti
Artikkeli017301
Sivumäärä5
JulkaisuCHINESE PHYSICS B
Vuosikerta28
Numero1
DOI - pysyväislinkit
TilaJulkaistu - 1 tammikuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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