Two-dimensional (2D) materials and their heterostructures have attracted a lot of attention due to their unique electronic and optical properties. MoS 2 as the most typical 2D semiconductors has great application potential in thin film transistors, photodetector, hydrogen evolution reaction, memory device, etc. However, the performance of MoS 2 devices is limited by the contact resistance and the improvement of its contact quality is important. In this work, we report the experimental investigation of pressure-enhanced contact quality between monolayer MoS 2 and graphite by conductive atom force microscope (C-AFM). It was found that at high pressure, the contact quality between graphite and MoS 2 is significantly improved. This pressure-mediated contact quality improvement between MoS 2 and graphite comes from the enhanced charge transfer between MoS 2 and graphite when MoS 2 is stretched. Our results provide a new way to enhance the contact quality between MoS 2 and graphite for further applications.