Precise control of the interlayer twist angle in large scale MoS2 homostructures

Tutkimustuotos: Lehtiartikkelivertaisarvioitu


  • Mengzhou Liao
  • Zheng Wei
  • Luojun Du
  • Qinqin Wang
  • Jian Tang
  • Hua Yu
  • Fanfan Wu
  • Jiaojiao Zhao
  • Xiaozhi Xu
  • Bo Han
  • Kaihui Liu
  • Peng Gao
  • Tomas Polcar
  • Zhipei Sun
  • Dongxia Shi
  • Rong Yang
  • Guangyu Zhang


  • Chinese Academy of Sciences
  • Czech Technical University in Prague
  • University of Chinese Academy of Sciences
  • Peking University
  • Songshan Lake Materials Laboratory


Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.


JulkaisuNature Communications
TilaJulkaistu - 1 joulukuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 42889659