Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

K. Hjelt; M. Sopanen; H. Lipsanen; T. Tuomi

Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

K. Hjelt
, M. Sopanen
, H. Lipsanen
, T. Tuomi

Tutkimustuotos: Työpaperi › Working paper › Professional

Alkuperäiskieli	Englanti
Julkaisupaikka	USA
Sivut	27-32
Tila	Julkaistu - 1993
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Julkaisusarja

Nimi	Materials Research Society Symposium Proceedings
Numero	30

Tutkimusalat

compound semiconductors
liquid phase epitaxy (LPE)
praseodymium dioxide doping

Siteeraa tätä

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title = "Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy",

keywords = "compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping, compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping, compound semiconductors, liquid phase epitaxy (LPE), praseodymium dioxide doping",

author = "K. Hjelt and M. Sopanen and H. Lipsanen and T. Tuomi",

year = "1993",

language = "English",

series = "Materials Research Society Symposium Proceedings",

number = "30",

pages = "27--32",

type = "WorkingPaper",

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TY - UNPB

T1 - Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

AU - Hjelt, K.

AU - Sopanen, M.

AU - Lipsanen, H.

AU - Tuomi, T.

PY - 1993

Y1 - 1993

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

KW - compound semiconductors

KW - liquid phase epitaxy (LPE)

KW - praseodymium dioxide doping

M3 - Working paper

T3 - Materials Research Society Symposium Proceedings

SP - 27

EP - 32

BT - Praseodymium dioxide doping of InGaAsP epilayer grown with liquid phase epitaxy

CY - USA

ER -