(poster) Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency

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Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2003
OKM-julkaisutyyppi	Ei sovellu
Tapahtuma	Conference on Gettering and Defect Engineering in Semiconductor Technology - Brandenburg, Saksa Kesto: 21 syysk. 2003 → 26 syysk. 2003 Konferenssinumero: 10

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Maa/Alue	Saksa
Kaupunki	Brandenburg
Ajanjakso	21/09/2003 → 26/09/2003

Siteeraa tätä

@conference{322ee02d819d452ea6e250a8fa477054,

title = "(poster) Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency",

keywords = "Cz-Silicon, Dissolution, Gettering, Iron, Oxygen Precipitates, Rapid Thermal Processing",

author = "H. V{\"a}in{\"o}l{\"a} and Peng Zhang and A. Haarahiltunen and Istratov, \{A. A.\} and Weber, \{E. R.\}",

year = "2003",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology ; Conference date: 21-09-2003 Through 26-09-2003",

}

(poster) Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency. / Väinölä, H.; Zhang, Peng; Haarahiltunen, A. et al.
2003. Abstraktin lähde: Conference on Gettering and Defect Engineering in Semiconductor Technology, Brandenburg, Saksa.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

TY - CONF

T1 - (poster) Simulations of Iron Re-Dissolution from Oxygen Precipitates in Cz-Silicon and its Impact on Gettering Efficiency

AU - Väinölä, H.

AU - Zhang, Peng

AU - Haarahiltunen, A.

AU - Istratov, A. A.

AU - Weber, E. R.

N1 - Conference code: 10

PY - 2003

Y1 - 2003

KW - Cz-Silicon

KW - Dissolution

KW - Gettering

KW - Iron

KW - Oxygen Precipitates

KW - Rapid Thermal Processing

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 21 September 2003 through 26 September 2003

ER -