(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Xiaolong Liu; Kexun Chen; Behrad Radfar; Patrick Mc Kearney; Simon Paulus; Sören Schäfer; Michael Serué; Doris Mutschall; Vesa Koskinen; Toni Pasanen; Ville Vähänissi; Mikko Juntunen; Stefan Kontermann; Hele Savin

(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Xiaolong Liu^*, Kexun Chen, Behrad Radfar, Patrick Mc Kearney, Simon Paulus, Sören Schäfer, Michael Serué, Doris Mutschall, Vesa Koskinen, Toni Pasanen, Ville Vähänissi, Mikko Juntunen, Stefan Kontermann, Hele Savin

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

14 Lataukset (Pure)

Abstrakti

We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

Alkuperäiskieli	Englanti
Tila	Julkaistu - 1 kesäk. 2023
OKM-julkaisutyyppi	Ei sovellu
Tapahtuma	Optics & Photonics Days - University of Eastern Finland (UEF), Joensuu, Suomi Kesto: 30 toukok. 2023 → 1 kesäk. 2023 https://www.photonics.fi/opd2023/program/

Conference

Conference	Optics & Photonics Days
Lyhennettä	OPD
Maa/Alue	Suomi
Kaupunki	Joensuu
Ajanjakso	30/05/2023 → 01/06/2023
www-osoite	https://www.photonics.fi/opd2023/program/

Pääsy asiakirjaan

OPD2023.v4Other version, 499 KBLisenssi: CC BY

FemtoBlack: Femtosecond laser sulfur hyperdoped black silicon for infrared photonic applications
Savin, H. (Vastuullinen tutkija), Yli-Koski, M. (Projektin jäsen), Liu, X. (Projektin jäsen), Setälä, O. (Projektin jäsen) & Radfar, B. (Projektin jäsen)
01/03/2020 → 31/08/2023
Projekti: Business Finland: Strategic centres for science, technology and innovation (SHOK)

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Siteeraa tätä

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title = "(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices",

abstract = "We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.",

author = "Xiaolong Liu and Kexun Chen and Behrad Radfar and {Mc Kearney}, Patrick and Simon Paulus and S{\"o}ren Sch{\"a}fer and Michael Seru{\'e} and Doris Mutschall and Vesa Koskinen and Toni Pasanen and Ville V{\"a}h{\"a}nissi and Mikko Juntunen and Stefan Kontermann and Hele Savin",

year = "2023",

month = jun,

day = "1",

language = "English",

note = "Optics & Photonics Days, OPD ; Conference date: 30-05-2023 Through 01-06-2023",

url = "https://www.photonics.fi/opd2023/program/",

}

TY - CONF

T1 - (poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

AU - Liu, Xiaolong

AU - Chen, Kexun

AU - Radfar, Behrad

AU - Mc Kearney, Patrick

AU - Paulus, Simon

AU - Schäfer, Sören

AU - Serué, Michael

AU - Mutschall, Doris

AU - Koskinen, Vesa

AU - Pasanen, Toni

AU - Vähänissi, Ville

AU - Juntunen, Mikko

AU - Kontermann, Stefan

AU - Savin, Hele

PY - 2023/6/1

Y1 - 2023/6/1

N2 - We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

AB - We design and fabricate an induced-junction silicon photodiode with femtosecond-laser hyperdoped contact on the back side, instead of typical implanted contact. We characterize dark current, noise spectrum, quantum efficiency, and blackbody responsivity. This technology shows advantages in lower contact resistance and simplified processing, yet further refinement of the process is ongoing.

M3 - Abstract

T2 - Optics & Photonics Days

Y2 - 30 May 2023 through 1 June 2023

ER -

(poster) Contact formation via femtosecond-laser hyperdoping in silicon optoelectronic devices

Abstrakti

Conference

Pääsy asiakirjaan

Sormenjälki

Projektit

FemtoBlack: Femtosecond laser sulfur hyperdoped black silicon for infrared photonic applications

Laitteet

OtaNano

OtaNano Nanofab

Siteeraa tätä