Positron experiments in -doped GaAs(Si) superlattices: Defect properties and positron diffusion

T. Laine, K. Saarinen, P. Hautojärvi, C. Corbel, M.J. Ashwin, R.C. Newman

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Alkuperäiskieli	Englanti
Julkaisupaikka	Portugal
Sivut	551-553
Tila	Julkaistu - 1997
OKM-julkaisutyyppi	D4 Julkaistu kehittämis- tai tutkimusraportti taikka -selvitys

Nimi	International Conference of Defects in Semiconductors, Aveiro,Portugal 21.-25.7.1997

Tutkimusalat

@techreport{cccf4d45616944bf8cec55aa5b585516,

title = "Positron experiments in -doped GaAs(Si) superlattices: Defect properties and positron diffusion",

keywords = "positron annihilation, positron annihilation, positron annihilation",

author = "T. Laine and K. Saarinen and P. Hautoj{\"a}rvi and C. Corbel and M.J. Ashwin and R.C. Newman",

year = "1997",

language = "English",

series = "International Conference of Defects in Semiconductors, Aveiro,Portugal 21.-25.7.1997",

pages = "551--553",

type = "WorkingPaper",

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TY - UNPB

T1 - Positron experiments in -doped GaAs(Si) superlattices: Defect properties and positron diffusion

AU - Laine, T.

AU - Saarinen, K.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Ashwin, M.J.

AU - Newman, R.C.

PY - 1997

Y1 - 1997

KW - positron annihilation

M3 - Working paper

T3 - International Conference of Defects in Semiconductors, Aveiro,Portugal 21.-25.7.1997

SP - 551

EP - 553

BT - Positron experiments in -doped GaAs(Si) superlattices: Defect properties and positron diffusion

CY - Portugal

ER -