Porosity-tuned thermal conductivity in thermoelectric Al-doped ZnO thin films grown by mist-chemical vapor deposition

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Shrikant Saini
  • Paolo Mele
  • Takafumi Oyake
  • Junichiro Shiomi
  • Janne Petteri Niemelä
  • Maarit Karppinen
  • Koji Miyazaki
  • Chaoyang Li
  • Toshiyuki Kawaharamura
  • Ataru Ichinose
  • Leopoldo Molina-Luna

Organisaatiot

  • Kyushu Institute of Technology
  • Shibaura Institute of Technology
  • University of Tokyo
  • Kochi University of Technology
  • Central Research Institute of Electric Power Industry
  • Technische Universität Darmstadt

Kuvaus

The potential of thermoelectric thin films lies in wide range of applications from micro-energy harvesting to the sensors. For this, it is essential to have high power factor and ultra-low thermal conductivity which have been reported in thin films produced by expensive vacuum techniques. However, for practical applications, it is essential to use inexpensive technique to grow thin film in large area. In this direction, we report the use of mist-chemical vapor deposition (CVD) technique to develop oxide thin films for thermoelectric application. We grow c-axis oriented nano-porous thin films of 2% Al-doped ZnO (AZO). These nano-porous films have enhance phonon scattering which results in the depression of thermal conductivity (κ) while maintaining similar order of magnitude of power factor as reported in dense films prepared by vacuum techniques. For example, κ300K decreases from 6.5 W/m.K for dense thin film (porosity = 7.9%) grown by pulsed laser deposition to 5.54 W/m.K for porous film (porosity = 24.2%) grown by mist-CVD while maintaining the power factor of similar order of magnitude for AZO film deposited on SrTiO3. The depression of thermal conductivity in porous films may lead to higher figure of merit which is promising for practical applications of thermoelectric oxide films.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut180-185
Sivumäärä6
JulkaisuThin Solid Films
Vuosikerta685
TilaSähköinen julkaisu (e-pub) ennen painettua julkistusta - 11 kesäkuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 34995477