Point defects induced work function modulation of β-Ga2O3

Tutkimustuotos: Lehtiartikkelivertaisarvioitu


  • B. R. Tak
  • Sheetal Dewan
  • Anshu Goyal
  • Ravi Pathak
  • Vinay Gupta
  • A. K. Kapoor
  • S. Nagarajan
  • R. Singh


  • Indian Institute of Technology, Delhi
  • University of Delhi
  • Solid State Physics Laboratory India


Effect of point defects such as vacancies and interstitials on the work function of β-Ga2O3 thin films grown by pulsed laser deposition was investigated. Relative change in Ag 3 and Ag 6 Raman phonon modes indicated formation of oxygen and gallium vacancy defects. The surface potential mapping of Ga2O3 thin films was performed by Kelvin probe force microscopy. Analytical calculations showed variation in work function with oxygen pressure. The work function values at extreme growth pressure conditions were found to be very high. Hence, Fermi level was pinned at the mid-gap energy in both oxygen-deficient condition and oxygen-rich conditions which is attributed to oxygen and gallium vacancy defects. This mechanism of controlling Fermi level pinning in β-Ga2O3 paves the way to fabricate high performance electronic devices.


JulkaisuApplied Surface Science
TilaJulkaistu - 28 tammikuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 28748631