Point defect balance in epitaxial GaSb

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Chalmers University of Technology
  • Chinese Academy of Sciences

Kuvaus

Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli082113
Sivut1-4
Sivumäärä4
JulkaisuApplied Physics Letters
Vuosikerta105
Numero8
TilaJulkaistu - 2014
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • defect, GaSb, positron

Lataa tilasto

Ei tietoja saatavilla

ID: 936201