Projekteja vuodessa
Abstrakti
The excellent field-effect passivation provided by aluminum oxide (Al2O3) on germanium surfaces relies on the high negative fixed charge present in the film. However, in many applications, a neutral or a positive charge would be preferred. Here, we investigate the surface passivation performance and the charge polarity of plasma-enhanced atomic layer deposited (PEALD) silicon oxide (SiO2) on Ge. The results show that even a 3 nm thick PEALD SiO2 provides a positive charge density (Qtot, ∼2.6 × 1011 cm−2) and a relatively good surface passivation (maximum surface recombination velocity SRVmax ∼16 cm/s). When the SiO2 thin film is capped with an ALD Al2O3 layer, the surface passivation improves further and a low midgap interface defect density (Dit) of ∼1 × 1011 eV−1 cm−2 is achieved. By varying the SiO2 thickness under the Al2O3 capping, it is possible to control the Qtot from virtually neutral (∼2.8 × 1010 cm−2) to moderately positive (∼8.5 × 1011 cm−2) values. Consequently, an excellent SRVmax as low as 1.3 cm/s is obtained using optimized SiO2/Al2O3 layer thicknesses. Finally, the origin of the positive charge as well as the interface defects related to PEALD SiO2 are discussed. © 2023 Author(s).
Alkuperäiskieli | Englanti |
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Artikkeli | 191602 |
Julkaisu | Applied Physics Letters |
Vuosikerta | 122 |
Numero | 19 |
DOI - pysyväislinkit | |
Tila | Julkaistu - 9 toukok. 2023 |
OKM-julkaisutyyppi | A1 Julkaistu artikkeli, soviteltu |
Sormenjälki
Sukella tutkimusaiheisiin 'Plasma-enhanced atomic layer deposited SiO2 enables positive thin film charge and surface recombination velocity of 1.3 cm/s on germanium'. Ne muodostavat yhdessä ainutlaatuisen sormenjäljen.-
NIR: Super-sensitive γ/X- and NIR-radiation detectors via defect-free nanostructures: Next Imaging Revolution?
Vähänissi, V., Savin, H., Ayedh, H., Setälä, O., Radfar, B. & Liu, H.
01/09/2020 → 31/08/2024
Projekti: Academy of Finland: Other research funding
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ATTRACT SUGER
Savin, H., Isometsä, J. & Pasanen, T.
01/05/2019 → 31/10/2020
Projekti: EU: Framework programmes funding
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RaPtor: RaPtor - Radiation and photo detector technologies RapTor
Savin, H., Pasanen, T., Liu, H., Setälä, O., Isometsä, J. & Vähänissi, V.
01/04/2019 → 31/05/2022
Projekti: Business Finland: Other research funding
Laitteet
Lehtileikkeet
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Reports from Aalto University Highlight Recent Findings in Applied Physics (Plasma-enhanced Atomic Layer Deposited Sio2 Enables Positive Thin Film Charge and Surface Recombination Velocity of 1.3 Cm/s On Germanium)
Hele Savin, Marko Yli-Koski, Ville Vähänissi & Hanchen Liu
19/07/2023
1 kohde/ Medianäkyvyys
Lehdistö/media: Esiintyminen mediassa