Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides

Toufik Sadi*, Oves Badami, Vihar Georgiev, Jie Ding, Asen Asenov

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu

28 Lataukset (Pure)

Abstrakti

Nowadays, resistive random-Access memories (RRAMs) are widely considered as the next generation of non-volatile memory devices. Here, we employ a physics-based multi-scale kinetic Monte Carlo simulator to study the microscopic transport properties and characteristics of promising RRAM devices based on transition metal oxides, specifically hafnium oxide (HfOx) based structures. The simulator handles self-consistently electronic charge and thermal transport in the three-dimensional (3D) space, allowing the realistic study of the dynamics of conductive filaments responsible for switching. By presenting insightful results, we argue that using a simulator of a 3D nature, accounting for self-consistent fields and self-heating, is necessary for understanding switching in RRAMs. As an example, we look into the unipolar operation mode, by showing how only the correct inclusion of self-heating allows the proper reconstruction of the switching behaviour. The simulation framework is well-suited for exploring the operation and reliability of RRAMs, providing a reliable computational tool for the optimization of existing device technologies and the path finding and development of new RRAM options.

AlkuperäiskieliEnglanti
OtsikkoProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
ToimittajatFrancesco Driussi
KustantajaIEEE
ISBN (elektroninen)9781728109404
DOI - pysyväislinkit
TilaJulkaistu - 1 syyskuuta 2019
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaInternational Conference on Simulation of Semiconductor Processes and Devices - Udine, Italia
Kesto: 4 syyskuuta 20196 syyskuuta 2019
Konferenssinumero: 24

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
LyhennettäSISPAD
MaaItalia
KaupunkiUdine
Ajanjakso04/09/201906/09/2019

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  • Siteeraa tätä

    Sadi, T., Badami, O., Georgiev, V., Ding, J., & Asenov, A. (2019). Physical Insights into the Transport Properties of RRAMs Based on Transition Metal Oxides. teoksessa F. Driussi (Toimittaja), Proceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 [8870391] IEEE. https://doi.org/10.1109/SISPAD.2019.8870391