Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etching

Xiaolong Liu*, Behrad Radfar, Kexun Chen, Olli Setälä, Toni Pasanen, Marko Yli-Koski, Hele Savin, Ville Vähänissi

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

16 Sitaatiot (Scopus)
164 Lataukset (Pure)

Abstrakti

In semiconductor manufacturing, black silicon (bSi) has traditionally been considered as a sign of unsuccessful etching. However, after more careful consideration, many of its properties have turned out to be so superior that its integration into devices has become increasingly attractive. In devices where bSi covers the whole wafer surface, such as solar cells, the integration is already rather mature and different bSi fabrication technologies have been studied extensively. Regarding the integration into devices where bSi should cover only small selected areas, existing research focuses on device properties with one specific bSi fabrication method. Here, we fabricate bSi patterns with varying dimensions ranging from millimeters to micrometers using three common bSi fabrication techniques, i.e., plasma etching, metal-assisted chemical etching (MACE) and femtosecond-laser etching, and study the corresponding fabrication characteristics and resulting material properties. Our results show that plasma etching is the most suitable method in the case of µm-scale devices, while MACE reached surprisingly almost the same performance. Femtosecond-laser has potential due to its maskless nature and capability for hyperdoping, however, in this study its moderate accuracy, large silicon consumption and spreading of the etching damage outside the bSi region left room for improvement.
AlkuperäiskieliEnglanti
Sivut504-510
Sivumäärä7
JulkaisuIEEE Transactions on Semiconductor Manufacturing
Vuosikerta35
Numero3
DOI - pysyväislinkit
TilaJulkaistu - elok. 2022
OKM-julkaisutyyppiA1 Alkuperäisartikkeli tieteellisessä aikakauslehdessä

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