Oxygen-related defects in Si and GaAs

M. Pesola, Y.-J. Lee, R.M. Nieminen, J. von Boehm

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Otsikko	PSIK-2000 Conference, Schwäbisch Gmund, 22-26 August 2000,
Sivut	95
Tila	Julkaistu - 2000
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa

Tutkimusalat

@inproceedings{3232800b370d4bd5a3b0eabdedce53a3,

title = "Oxygen-related defects in Si and GaAs",

keywords = "GaAs, oxygen defect, silicon, GaAs, oxygen defect, silicon, GaAs, oxygen defect, silicon",

author = "M. Pesola and Y.-J. Lee and R.M. Nieminen and {von Boehm}, J.",

year = "2000",

language = "English",

pages = "95",

booktitle = "PSIK-2000 Conference, Schw{\"a}bisch Gmund, 22-26 August 2000,",

}

TY - GEN

T1 - Oxygen-related defects in Si and GaAs

AU - Pesola, M.

AU - Lee, Y.-J.

AU - Nieminen, R.M.

AU - von Boehm, J.

PY - 2000

Y1 - 2000

KW - GaAs

KW - oxygen defect

KW - silicon

KW - GaAs

KW - oxygen defect

KW - silicon

KW - GaAs

KW - oxygen defect

KW - silicon

M3 - Conference article in proceedings

SP - 95

BT - PSIK-2000 Conference, Schwäbisch Gmund, 22-26 August 2000,

ER -