Origin of nanoscale incipient plasticity in GaAs and InP crystal

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Dariusz Chrobak
  • Michał Trębala
  • Artur Chrobak
  • Roman Nowak

Organisaatiot

  • University of Silesia in Katowice

Kuvaus

In this article, we exhibit the influence of doping on nanoindentation-induced incipient plasticity in GaAs and InP crystals. Nanoindentation experiments carried out on a GaAs crystal show a reduction in contact pressure at the beginning of the plastic deformation caused by an increase in Si doping. Given that the substitutional Si defects cause a decrease in the pressure of the GaAs-I → GaAs-II phase transformation, we concluded that the elastic–plastic transition in GaAs is a phase-change-driven phenomenon. In contrast, Zn-and S-doping of InP crystals cause an increase in contact pressure at the elastic–plastic transition, revealing its dislocation origin. Our mechanical measurements were supplemented by nanoECR experiments, which showed a significant difference in the flow of the electrical current at the onset of plastic deformation of the semiconductors under consideration.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli651
JulkaisuCrystals
Vuosikerta9
Numero12
TilaJulkaistu - 1 joulukuuta 2019
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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