Origin of band gap bowing in dilute GaAs1-xNx and GaP1-xNx alloys: a real-space view

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is largely debated. In this paper we show the dilute GaAs1−xNx and GaP1−xNx as representative examples that the nitrogen-induced states close to the conduction band minimum propagate along the zigzag chains on the {110} planes. Thereby states originating from different N atoms interact with each other resulting in broadening of the nitrogen-induced states which narrows the band gap. Our modeling based on ab initio theoretical calculations explains the experimentally observed N concentration dependent band gap narrowing both qualitatively and quantitatively.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli035204
Sivut1-6
Sivumäärä6
JulkaisuPhysical Review B
Vuosikerta88
Numero3
TilaJulkaistu - heinäkuuta 2013
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Tutkimusalat

  • band gap, GaAs, GaP, semiconductor

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