Origin of a Nanoindentation Pop-in Event in Silicon Crystal

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Origin of a Nanoindentation Pop-in Event in Silicon Crystal. / Abram, R.; Chrobak, D.; Nowak, R.

julkaisussa: Physical Review Letters, Vuosikerta 118, Nro 9, 095502, 03.03.2017.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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Bibtex - Lataa

@article{3aacd8b7457f46a196af2168b712bf26,
title = "Origin of a Nanoindentation Pop-in Event in Silicon Crystal",
abstract = "The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si-III/XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.",
author = "R. Abram and D. Chrobak and R. Nowak",
year = "2017",
month = "3",
day = "3",
doi = "10.1103/PhysRevLett.118.095502",
language = "English",
volume = "118",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "9",

}

RIS - Lataa

TY - JOUR

T1 - Origin of a Nanoindentation Pop-in Event in Silicon Crystal

AU - Abram, R.

AU - Chrobak, D.

AU - Nowak, R.

PY - 2017/3/3

Y1 - 2017/3/3

N2 - The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si-III/XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.

AB - The Letter concerns surface nanodeformation of Si crystal using atomistic simulation. Our results account for both the occurrence and absence of pop-in events during nanoindentation. We have identified two distinct processes responsible for indentation deformation based on load-depth response, stress-induced evolution of crystalline structure and surface profile. The first, resulting in a pop-in, consists of the extrusion of the crystalline high pressure Si-III/XII phase, while the second, without a pop-in, relies on a flow of amorphized Si to the crystal surface. Of particular interest to silicon technology will be our clarification of the interplay among amorphization, crystal-to-crystal transition, and extrusion of transformed material to the surface.

UR - http://www.scopus.com/inward/record.url?scp=85014661431&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.118.095502

DO - 10.1103/PhysRevLett.118.095502

M3 - Article

VL - 118

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 9

M1 - 095502

ER -

ID: 17036338