(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Xiaolong Liu; Ramsha Khan; Hannu Pasanen; Harri Ali-Löytty; Ville Vähänissi; Mika Valden; Nikolai V. Tkachenko; Hele Savin

(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Xiaolong Liu^*, Ramsha Khan, Hannu Pasanen, Harri Ali-Löytty, Ville Vähänissi, Mika Valden, Nikolai V. Tkachenko, Hele Savin

^*Tämän työn vastaava kirjoittaja

Tampere University

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Abstrakti

Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

Alkuperäiskieli	Englanti
Sivumäärä	2
Tila	Hyväksytty/In press - 2023
OKM-julkaisutyyppi	Ei oikeutettu
Tapahtuma	Solid State Devices and Materials - Kesto: 1 tammik. 1958 → …

Conference

Conference	Solid State Devices and Materials
Lyhennettä	SSDM
Ajanjakso	01/01/1958 → …

1 Aktiivinen

-: Fotoniikan Tutkimus ja Innovaatio
Savin, H., Liu, X. & Radfar, B.
01/09/2022 → 31/12/2026
Projekti: Academy of Finland: Other research funding

OtaNano
Anna Rissanen (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Päivikki Repo (Manager)
OtaNano
Laitteistot/tilat: Facility

1 Konferenssiesitelmä

Surface Passivation and Charge Transfer at TiO2/Si Interface
Xiaolong Liu (Puhuja), Ramsha Khan (Kontribuuttori), Hannu Pasanen (Kontribuuttori), Harri Ali-Löytty (Kontribuuttori), Ville Vähänissi (Kontribuuttori), Mika Valden (Kontribuuttori), Nikolai V. Tkachenko (Kontribuuttori) & Hele Savin (Kontribuuttori)
8 syysk. 2023
Aktiviteetti: Konferenssiesitelmä

Siteeraa tätä

@conference{88e8c13130fb478d8cdb5a96962112d1,

title = "(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface",

abstract = "Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects. ",

author = "Xiaolong Liu and Ramsha Khan and Hannu Pasanen and Harri Ali-L{\"o}ytty and Ville V{\"a}h{\"a}nissi and Mika Valden and Tkachenko, {Nikolai V.} and Hele Savin",

year = "2023",

language = "English",

note = "Solid State Devices and Materials, SSDM ; Conference date: 01-01-1958",

}

TY - CONF

T1 - (oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

AU - Liu, Xiaolong

AU - Khan, Ramsha

AU - Pasanen, Hannu

AU - Ali-Löytty, Harri

AU - Vähänissi, Ville

AU - Valden, Mika

AU - Tkachenko, Nikolai V.

AU - Savin, Hele

PY - 2023

Y1 - 2023

N2 - Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

AB - Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.

M3 - Abstract

T2 - Solid State Devices and Materials

Y2 - 1 January 1958

ER -

(oral talk) Surface Passivation and Charge Transfer at TiO2/Si Interface

Abstrakti

Conference

Sormenjälki

Projektit

-: Fotoniikan Tutkimus ja Innovaatio

Laitteet

OtaNano

OtaNano Nanofab

Aktiviteetit

Surface Passivation and Charge Transfer at TiO2/Si Interface

Siteeraa tätä