(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Toni Pasanen; Jennifer Ott; Päivikki Repo; Heli Seppänen; Ville Vähänissi; Hele Savin

(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Toni Pasanen, Jennifer Ott, Päivikki Repo, Heli Seppänen, Ville Vähänissi, Hele Savin

Helsinki Inst. of Phys.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Abstrakti

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2019
OKM-julkaisutyyppi	Ei sovellu
Tapahtuma	Conference on Gettering and Defect Engineering in Semiconductor Technology - Seehotel Zeuthen, Zeuthen, Saksa Kesto: 22 syysk. 2019 → 27 syysk. 2019 Konferenssinumero: 18 https://www.gadest2019.org/index.php

Conference

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Lyhennettä	GADEST
Maa/Alue	Saksa
Kaupunki	Zeuthen
Ajanjakso	22/09/2019 → 27/09/2019
www-osoite	https://www.gadest2019.org/index.php

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

Young Scientist Award (GADEST)
Pasanen, T. (Recipient), Savin, H. (Supervising professor) & Vähänissi, V. (Advisor), 27 syysk. 2019
Palkinto: Palkinto tai huomionosoitus tuotoksesta

Passivation of detector-grade Fz-Si with atomic layer deposited aluminium oxide
Pasanen, T. (Puhuja), Ott, J. (Kontribuuttori), Repo, P. (Kontribuuttori), Seppänen, H. (Kontribuuttori), Vähänissi, V. (Kontribuuttori) & Savin, H. (Kontribuuttori)
23 syysk. 2019
Aktiviteetti: Konferenssiesitelmä

Siteeraa tätä

@conference{407f9ae420fa4acfa0f526041bbff83b,

title = "(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide",

keywords = "aluminum oxides, charge carrier lifetimes, detectors, float-zone silicon, surface passivation",

author = "Toni Pasanen and Jennifer Ott and P{\"a}ivikki Repo and Heli Sepp{\"a}nen and Ville V{\"a}h{\"a}nissi and Hele Savin",

year = "2019",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology , GADEST ; Conference date: 22-09-2019 Through 27-09-2019",

url = "https://www.gadest2019.org/index.php",

}

TY - CONF

T1 - (oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

AU - Pasanen, Toni

AU - Ott, Jennifer

AU - Repo, Päivikki

AU - Seppänen, Heli

AU - Vähänissi, Ville

AU - Savin, Hele

N1 - Conference code: 18

PY - 2019

Y1 - 2019

KW - aluminum oxides

KW - charge carrier lifetimes

KW - detectors

KW - float-zone silicon

KW - surface passivation

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 22 September 2019 through 27 September 2019

ER -

(oral talk) Passivation of Detector‐Grade FZ‐Si with ALD‐Grown Aluminium Oxide

Abstrakti

Conference

Laitteet

OtaNano

OtaNano Nanofab

Palkinnot

Young Scientist Award (GADEST)

Aktiviteetit

Passivation of detector-grade Fz-Si with atomic layer deposited aluminium oxide

Siteeraa tätä