(oral talk) Nanostructured Silicon Hyperdoped with Se by Ion Implantation and Flash Lamp Annealing

Physics

• Silicon 100%
• Ion Implantation 100%
• Energy Gaps (Solid State) 60%
• Annealing 30%
• Laser 30%
• Ion 30%
• Etching 20%
• Photons 20%
• Crystals 20%
• Recombination 20%
• Reflectance 20%
• Performance 10%
• Impact 10%
• Solar Cell 10%
• Light 10%
• Spectra 10%
• Contrast 10%
• Melting Point 10%
• Implantation 10%
• Optical Properties 10%
• Photometer 10%
• Ultrafast Lasers 10%
• Electrical Properties 10%
• Surface Layers 10%

Material Science

• Ion Implantation 100%
• Lamp 100%
• Laser 40%
• Doping (Additives) 30%
• Nanocrystalline Material 30%
• Annealing 30%
• Surface 20%
• Reactive Ion Etching 20%
• Crystal 20%
• Solar Cell 10%
• Devices 10%
• Optical Property 10%
• Electrical Property 10%
• Surface Texture 10%
• Photosensor 10%
• Surface Structure 10%

Engineering

• Silicon 100%
• Annealing 30%
• Photons 20%
• Inductively Coupled Plasma 20%
• Reflectance 20%
• Recombination 20%
• Dopants 20%
• Performance 10%
• Surfaces 10%
• Forming 10%
• Obtains 10%
• Induced Damage 10%
• Losses 10%
• Melting 10%
• Wavelength 10%
• High Concentration 10%
• Practical Application 10%
• Surface Layer 10%
• Planar Surface 10%
• Shallower 10%
• Lower Energy 10%
• Photodetector 10%
• Infrared Light 10%
• Implantation 10%