(oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation

Behrad Radfar; Amr Ghazy; Xiaolong Liu; Ville Vähänissi; Maarit Karppinen; Hele Savin

(oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation

Behrad Radfar^*, Amr Ghazy, Xiaolong Liu, Ville Vähänissi, Maarit Karppinen, Hele Savin

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Abstrakti

Si solar cell cannot absorb photon with energy less than 1.1 eV bandgap. Er2O3, as a solution, absorbs low-energy photons and emits higher-energy photons. Si solar cell also suffers from recombination of photogenerated charge carriers at surface. We study surface passivation property of (i) bare ALD Er2O3 or Er2O3 deposited on top of (ii) SiO2 or (iii) Al2O3 by measuring minority carrier lifetime.

Alkuperäiskieli	Englanti
Tila	Julkaistu - 30 toukok. 2024
OKM-julkaisutyyppi	Ei sovellu
Tapahtuma	Optics & Photonics Days - Helsinki, Suomi Kesto: 28 toukok. 2024 → 30 toukok. 2024

Conference

Conference	Optics & Photonics Days
Lyhennettä	OPD
Maa/Alue	Suomi
Kaupunki	Helsinki
Ajanjakso	28/05/2024 → 30/05/2024

OtaNano
Rissanen, A. (Manager)
Aalto-yliopisto
Laitteistot/tilat: Facility
OtaNano Nanofab
Repo, P. (Manager) & Rissanen, A. (Other)
OtaNano
Laitteistot/tilat: Facility

1 Article

Impact of Er-based Atomic Layer Deposited Upconverting Oxides on Si Solar Cell Surface Passivation
Radfar, B., Ghazy, A., Pekkanen, J., Liu, X., Vähänissi, V., Karppinen, M. & Savin, H., 24 kesäk. 2025, (Sähköinen julkaisu (e-pub) ennen painettua julkistusta) julkaisussa: Physica Status Solidi. A: Applications and Materials Science. 2500023.
Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

Open access

Siteeraa tätä

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title = "(oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation",

abstract = "Si solar cell cannot absorb photon with energy less than 1.1 eV bandgap. Er2O3, as a solution, absorbs low-energy photons and emits higher-energy photons. Si solar cell also suffers from recombination of photogenerated charge carriers at surface. We study surface passivation property of (i) bare ALD Er2O3 or Er2O3 deposited on top of (ii) SiO2 or (iii) Al2O3 by measuring minority carrier lifetime.",

author = "Behrad Radfar and Amr Ghazy and Xiaolong Liu and Ville V{\"a}h{\"a}nissi and Maarit Karppinen and Hele Savin",

year = "2024",

month = may,

day = "30",

language = "English",

note = "Optics & Photonics Days, OPD ; Conference date: 28-05-2024 Through 30-05-2024",

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TY - CONF

T1 - (oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation

AU - Radfar, Behrad

AU - Ghazy, Amr

AU - Liu, Xiaolong

AU - Vähänissi, Ville

AU - Karppinen, Maarit

AU - Savin, Hele

PY - 2024/5/30

Y1 - 2024/5/30

N2 - Si solar cell cannot absorb photon with energy less than 1.1 eV bandgap. Er2O3, as a solution, absorbs low-energy photons and emits higher-energy photons. Si solar cell also suffers from recombination of photogenerated charge carriers at surface. We study surface passivation property of (i) bare ALD Er2O3 or Er2O3 deposited on top of (ii) SiO2 or (iii) Al2O3 by measuring minority carrier lifetime.

AB - Si solar cell cannot absorb photon with energy less than 1.1 eV bandgap. Er2O3, as a solution, absorbs low-energy photons and emits higher-energy photons. Si solar cell also suffers from recombination of photogenerated charge carriers at surface. We study surface passivation property of (i) bare ALD Er2O3 or Er2O3 deposited on top of (ii) SiO2 or (iii) Al2O3 by measuring minority carrier lifetime.

M3 - Abstract

T2 - Optics & Photonics Days

Y2 - 28 May 2024 through 30 May 2024

ER -

(oral talk) Impact of upconverting atomic layer deposited Er2O3 on Si solar cell surface passivation

Abstrakti

Conference

Sormenjälki

Laitteet

OtaNano

OtaNano Nanofab

Tutkimustuotos

Impact of Er-based Atomic Layer Deposited Upconverting Oxides on Si Solar Cell Surface Passivation

Siteeraa tätä