(oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

Hannu Laine, Alessandro Inglese, Ville Vähänissi, Hele Savin

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2017
OKM-julkaisutyyppi	Ei oikeutettu
Tapahtuma	Conference on Gettering and Defect Engineering in Semiconductor Technology - Lopota resort, Georgia, Telavi, Georgia Kesto: 1 lokak. 2017 → 6 lokak. 2017 Konferenssinumero: 17

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Lyhennettä	GADEST
Maa/Alue	Georgia
Kaupunki	Telavi
Ajanjakso	01/10/2017 → 06/10/2017

OpenUrl-saatavuus

@conference{726e6336eb5f42149e98dd01e227094b,

title = "(oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation",

keywords = "transition, photodetectors, chemical compounds, doping, heat treatments",

author = "Hannu Laine and Alessandro Inglese and Ville V{\"a}h{\"a}nissi and Hele Savin",

year = "2017",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 01-10-2017 Through 06-10-2017",

}

(oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation. / Laine, Hannu; Inglese, Alessandro; Vähänissi, Ville et al.
2017. Abstraktin lähde: Conference on Gettering and Defect Engineering in Semiconductor Technology, Telavi, Georgia.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

TY - CONF

T1 - (oral talk) Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation

AU - Laine, Hannu

AU - Inglese, Alessandro

AU - Vähänissi, Ville

AU - Savin, Hele

N1 - Conference code: 17

PY - 2017

Y1 - 2017

KW - transition

KW - photodetectors

KW - chemical compounds

KW - doping

KW - heat treatments

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 1 October 2017 through 6 October 2017

ER -