(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer

Hanchen Liu; Toni Pasanen; Tsun Hang Fung; Joonas Isometsä; Oskari Leiviskä; Ville Vähänissi; Hele Savin

(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer

Hanchen Liu, Toni Pasanen, Tsun Hang Fung, Joonas Isometsä, Oskari Leiviskä, Ville Vähänissi, Hele Savin

University of New South Wales

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

Alkuperäiskieli	Englanti
Tila	Julkaistu - 2022
OKM-julkaisutyyppi	Ei oikeutettu
Tapahtuma	Conference on Gettering and Defect Engineering in Semiconductor Technology - Mondsee, Itävalta Kesto: 11 syysk. 2022 → 17 syysk. 2022

Conference

Conference	Conference on Gettering and Defect Engineering in Semiconductor Technology
Lyhennettä	GADEST
Maa/Alue	Itävalta
Kaupunki	Mondsee
Ajanjakso	11/09/2022 → 17/09/2022

OpenUrl-saatavuus

Koko teksti

2 Aktiivinen
3 Päättynyt

HYGER: Highly efficient IR detection unit based on high-purity black germanium technology
Savin, H., Morozova, O., Fung, J. & Liu, H.
30/04/2022 → 31/05/2024
Projekti: EU: Framework programmes funding
NIR: Super-sensitive γ/X- and NIR-radiation detectors via defect-free nanostructures: Next Imaging Revolution?
Vähänissi, V., Savin, H., Ayedh, H., Setälä, O., Radfar, B. & Liu, H.
01/09/2020 → 31/08/2024
Projekti: Academy of Finland: Other research funding
Superior infrared sensors
Savin, H. & Pasanen, T.
29/01/2021 → 28/01/2023
Projekti: Domestic funds and foundations

Siteeraa tätä

@conference{95244e927f3344bb85e7aae479f93f4a,

title = "(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer",

author = "Hanchen Liu and Toni Pasanen and Fung, {Tsun Hang} and Joonas Isomets{\"a} and Oskari Leivisk{\"a} and Ville V{\"a}h{\"a}nissi and Hele Savin",

year = "2022",

language = "English",

note = "Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST ; Conference date: 11-09-2022 Through 17-09-2022",

}

(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer. / Liu, Hanchen; Pasanen, Toni; Fung, Tsun Hang et al.
2022. Abstraktin lähde: Conference on Gettering and Defect Engineering in Semiconductor Technology, Mondsee, Itävalta.

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Abstract › Scientific › vertaisarvioitu

TY - CONF

T1 - (oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer

AU - Liu, Hanchen

AU - Pasanen, Toni

AU - Fung, Tsun Hang

AU - Isometsä, Joonas

AU - Leiviskä, Oskari

AU - Vähänissi, Ville

AU - Savin, Hele

PY - 2022

Y1 - 2022

M3 - Abstract

T2 - Conference on Gettering and Defect Engineering in Semiconductor Technology

Y2 - 11 September 2022 through 17 September 2022

ER -

(oral talk) Controlling charge polarity and defect density at Ge/Al2O3 interface using SiNx interlayer

Conference

OpenUrl-saatavuus

Projektit

HYGER: Highly efficient IR detection unit based on high-purity black germanium technology

NIR: Super-sensitive γ/X- and NIR-radiation detectors via defect-free nanostructures: Next Imaging Revolution?

Superior infrared sensors

Siteeraa tätä