(oral talk) Characterization of denuded zones in internally gettered silicon wafers by electron beam induced current measurements

Antti Haarahiltunen, Hele Väinölä, M Yli-Koski, Risto Ruotsalainen, E Saarnilehto, S Kaarlela, E Haimi, J. Sinkkonen

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaAbstractScientificvertaisarvioitu

Abstrakti

In the electron beam induced current (EBIC)-measurements, the minimum detectable denuded zone (DZ) width is determined by the beam voltage. Gettering was observed by comparing intentionally contaminated and non-contaminated samples at low beam voltage. In gettering, impurity atoms are transferred from the active surface region of a wafer to some location where they do not adversely affect the device performance. Oxygen precipitation close to the wafer surfaces is suppressed due to the outdiffusion of oxygen and so-called denuded zones are formed. The DZ width can be approximated to be two times of the oxygen diffusion length in the first Hi-treatment. The DZ width can be measured from the cross-section ofiG wafers by EBIC-imaging and line scanning. The results are in agreement with other methods: scanning infrared microscopy, Wright-etch and surface photovoltage.
AlkuperäiskieliEnglanti
TilaJulkaistu - 2003
OKM-julkaisutyyppiEi oikeutettu
TapahtumaInternational Conference on Microscopy of Semiconducting Materials - Cambridge, Iso-Britannia
Kesto: 31 maalisk. 20034 huhtik. 2003
Konferenssinumero: 13

Conference

ConferenceInternational Conference on Microscopy of Semiconducting Materials
LyhennettäMSM
Maa/AlueIso-Britannia
KaupunkiCambridge
Ajanjakso31/03/200304/04/2003

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