Optically excited THz generation from ordered arrays of GaAs nanowires

V. N. Trukhin; A. D. Bouravleuv; I. A. Mustafin; J. P. Kakko; H. Lipsanen

doi:10.1016/j.proeng.2017.09.674

Optically excited THz generation from ordered arrays of GaAs nanowires

V. N. Trukhin
, A. D. Bouravleuv
, I. A. Mustafin^*
, J. P. Kakko
, H. Lipsanen

^*Tämän työn vastaava kirjoittaja

IOFFE-Institute
St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
RAS - St. Petersburg Academic University

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

3 Viittaukset (Web of Science)

237 Lataukset (Pure)

Abstrakti

THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

Alkuperäiskieli	Englanti
Otsikko	3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia
Kustantaja	Elsevier
Sivut	100-104
Sivumäärä	5
Vuosikerta	201
DOI - pysyväislinkit	https://doi.org/10.1016/j.proeng.2017.09.674
Tila	Julkaistu - 2017
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisussa
Tapahtuma	International Conference on Information Technology and Nanotechnology - Samara, Venäjä Kesto: 25 huhtik. 2017 → 27 huhtik. 2017 Konferenssinumero: 3

Julkaisusarja

Nimi	Procedia Engineering
ISSN (elektroninen)	1877-7058

Conference

Conference	International Conference on Information Technology and Nanotechnology
Lyhennettä	ITNT
Maa/Alue	Venäjä
Kaupunki	Samara
Ajanjakso	25/04/2017 → 27/04/2017

Pääsy asiakirjaan

10.1016/j.proeng.2017.09.674Lisenssi: CC BY-NC-ND

trukhin-et-al-procedia_engineeringFinal published version, 714 KBLisenssi: CC BY-NC-ND

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Link to publication in Scopus

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Trukhin, V. N., Bouravleuv, A. D., Mustafin, I. A., Kakko, J. P., & Lipsanen, H. (2017). Optically excited THz generation from ordered arrays of GaAs nanowires. teoksessa 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia (Vuosikerta 201, Sivut 100-104). (Procedia Engineering). Elsevier. https://doi.org/10.1016/j.proeng.2017.09.674

@inproceedings{d265f68a26c34e23bd515ad677b98998,

title = "Optically excited THz generation from ordered arrays of GaAs nanowires",

abstract = "THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.",

keywords = "GaAs, III-V semiconductors, leaky mods, light absorption, MOVPE, nanowires, NWs, Terahertz generation, THz",

author = "Trukhin, \{V. N.\} and Bouravleuv, \{A. D.\} and Mustafin, \{I. A.\} and Kakko, \{J. P.\} and H. Lipsanen",

year = "2017",

doi = "10.1016/j.proeng.2017.09.674",

language = "English",

volume = "201",

series = "Procedia Engineering",

publisher = "Elsevier",

pages = "100--104",

booktitle = "3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia",

address = "Netherlands",

note = "International Conference on Information Technology and Nanotechnology, ITNT ; Conference date: 25-04-2017 Through 27-04-2017",

}

Trukhin, VN, Bouravleuv, AD, Mustafin, IA, Kakko, JP & Lipsanen, H 2017, Optically excited THz generation from ordered arrays of GaAs nanowires. julkaisussa 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia. Vuosikerta 201, Procedia Engineering, Elsevier, Sivut 100-104, International Conference on Information Technology and Nanotechnology, Samara, Venäjä, 25/04/2017. https://doi.org/10.1016/j.proeng.2017.09.674

Optically excited THz generation from ordered arrays of GaAs nanowires. / Trukhin, V. N.; Bouravleuv, A. D.; Mustafin, I. A. et al.
3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia. Vuosikerta 201 Elsevier, 2017. s. 100-104 (Procedia Engineering).

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussa › Conference article in proceedings › Scientific › vertaisarvioitu

TY - GEN

T1 - Optically excited THz generation from ordered arrays of GaAs nanowires

AU - Trukhin, V. N.

AU - Bouravleuv, A. D.

AU - Mustafin, I. A.

AU - Kakko, J. P.

AU - Lipsanen, H.

N1 - Conference code: 3

PY - 2017

Y1 - 2017

N2 - THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

AB - THz generation under excitation by ultrashort optical pulses from ordered arrays of GaAs nanowires is reported. It was found that the efficiency of THz generation is determined by the geometrical parameters of nanostructures and has a resonant character. Furthermore, it is shown that the terahertz generation efficiency at optimum geometrical parameters of an array of semiconductor nanowires is greater than the corresponding value for bulk semiconductor p-InAs which is the most effective THz emitter.

KW - GaAs

KW - III-V semiconductors

KW - leaky mods

KW - light absorption

KW - MOVPE

KW - nanowires

KW - NWs

KW - Terahertz generation

KW - THz

UR - https://www.scopus.com/pages/publications/85033456460

U2 - 10.1016/j.proeng.2017.09.674

DO - 10.1016/j.proeng.2017.09.674

M3 - Conference article in proceedings

AN - SCOPUS:85033456460

VL - 201

T3 - Procedia Engineering

SP - 100

EP - 104

BT - 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia

PB - Elsevier

T2 - International Conference on Information Technology and Nanotechnology

Y2 - 25 April 2017 through 27 April 2017

ER -

Trukhin VN, Bouravleuv AD, Mustafin IA, Kakko JP, Lipsanen H. Optically excited THz generation from ordered arrays of GaAs nanowires. julkaisussa 3rd International Conference “Information Technology and Nanotechnology” , ITNT- 2017, 25-27 April 2017, Samara, Russia. Vuosikerta 201. Elsevier. 2017. s. 100-104. (Procedia Engineering). doi: 10.1016/j.proeng.2017.09.674

Optically excited THz generation from ordered arrays of GaAs nanowires

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