Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature

Timur Nikitin; Rama Velagapudi; Jani Sainio; Jouko Lahtinen; Markku Räsänen; Sergei Novikov; Leonid Khriachtchev

doi:10.1063/1.4764893

Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature

Timur Nikitin, Rama Velagapudi, Jani Sainio, Jouko Lahtinen, Markku Räsänen, Sergei Novikov, Leonid Khriachtchev

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

17 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Julkaisu	Journal of Applied Physics
Numero	112
DOI - pysyväislinkit	https://doi.org/10.1063/1.4764893
Tila	Julkaistu - 2012
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Tutkimusalat

Silicon nanocrystals, Raman, X-ray photoelectron
spectroscopy

Pääsy asiakirjaan

10.1063/1.4764893

http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000112000009094316000001&idtype=cvips&prog=normal

Siteeraa tätä

Nikitin, T., Velagapudi, R., Sainio, J., Lahtinen, J., Räsänen, M., Novikov, S., & Khriachtchev, L. (2012). Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature. Journal of Applied Physics, (112). https://doi.org/10.1063/1.4764893

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title = "Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature",

keywords = "Silicon nanocrystals, Raman, X-ray photoelectron, spectroscopy, Silicon nanocrystals, Raman, X-ray photoelectron, spectroscopy, Silicon nanocrystals, Raman, X-ray photoelectron, spectroscopy",

author = "Timur Nikitin and Rama Velagapudi and Jani Sainio and Jouko Lahtinen and Markku R{\"a}s{\"a}nen and Sergei Novikov and Leonid Khriachtchev",

year = "2012",

doi = "10.1063/1.4764893",

language = "English",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "112",

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Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature. / Nikitin, Timur; Velagapudi, Rama ; Sainio, Jani ; Lahtinen, Jouko; Räsänen, Markku; Novikov, Sergei; Khriachtchev, Leonid.

julkaisussa: Journal of Applied Physics, Nro 112, 2012.

Tutkimustuotos: Lehtiartikkeli › Article › Scientific › vertaisarvioitu

TY - JOUR

T1 - Optical and structural properties of SiOx films grown by molecular beam deposition: Effect of the Si concentration and annealing temperature

AU - Nikitin, Timur

AU - Velagapudi, Rama

AU - Sainio, Jani

AU - Lahtinen, Jouko

AU - Räsänen, Markku

AU - Novikov, Sergei

AU - Khriachtchev, Leonid

PY - 2012

Y1 - 2012

KW - Silicon nanocrystals, Raman, X-ray photoelectron

KW - spectroscopy

KW - Silicon nanocrystals, Raman, X-ray photoelectron

KW - spectroscopy

KW - Silicon nanocrystals, Raman, X-ray photoelectron

KW - spectroscopy

UR - http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=JAPIAU000112000009094316000001&idtype=cvips&prog=normal

U2 - 10.1063/1.4764893

DO - 10.1063/1.4764893

M3 - Article

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 112

ER -