On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

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On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. / Vasileva, G. Yu; Vasilyev, Yu B.; Novikov, S. N.; Danilov, S. N.; Ganichev, S. D.

julkaisussa: Semiconductors, Vuosikerta 52, Nro 8, 01.08.2018, s. 1077-1081.

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Harvard

Vasileva, GY, Vasilyev, YB, Novikov, SN, Danilov, SN & Ganichev, SD 2018, 'On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation', Semiconductors, Vuosikerta. 52, Nro 8, Sivut 1077-1081. https://doi.org/10.1134/S1063782618080225

APA

Vasileva, G. Y., Vasilyev, Y. B., Novikov, S. N., Danilov, S. N., & Ganichev, S. D. (2018). On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. Semiconductors, 52(8), 1077-1081. https://doi.org/10.1134/S1063782618080225

Vancouver

Author

Vasileva, G. Yu ; Vasilyev, Yu B. ; Novikov, S. N. ; Danilov, S. N. ; Ganichev, S. D. / On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation. Julkaisussa: Semiconductors. 2018 ; Vuosikerta 52, Nro 8. Sivut 1077-1081.

Bibtex - Lataa

@article{658548e1ef194b52aa5a3c16c34e12b6,
title = "On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation",
abstract = "A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.",
author = "Vasileva, {G. Yu} and Vasilyev, {Yu B.} and Novikov, {S. N.} and Danilov, {S. N.} and Ganichev, {S. D.}",
year = "2018",
month = "8",
day = "1",
doi = "10.1134/S1063782618080225",
language = "English",
volume = "52",
pages = "1077--1081",
journal = "Semiconductors",
issn = "1063-7826",
number = "8",

}

RIS - Lataa

TY - JOUR

T1 - On the Fabrication of Graphene p–n Junctions and Their Application for Detecting Terahertz Radiation

AU - Vasileva, G. Yu

AU - Vasilyev, Yu B.

AU - Novikov, S. N.

AU - Danilov, S. N.

AU - Ganichev, S. D.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

AB - A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.

UR - http://www.scopus.com/inward/record.url?scp=85049594818&partnerID=8YFLogxK

U2 - 10.1134/S1063782618080225

DO - 10.1134/S1063782618080225

M3 - Article

VL - 52

SP - 1077

EP - 1081

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 27085822