On the Evolution of Strain and Electrical Properties in As-Grown and Annealed Si: P Epitaxial Films for Source-Drain Stressor Applications

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • Sathish Kumar Dhayalan
  • Jiri Kujala
  • Jonatan Slotte

  • Geoffrey Pourtois
  • Eddy Simoen
  • Erik Rosseel
  • Andriy Hikavyy
  • Yosuke Shimura
  • Roger Loo
  • Wilfried Vandervorst

Organisaatiot

  • IMEC Vzw
  • University of Antwerp
  • Ghent University

Kuvaus

Heavily P doped Si:P epitaxial layers have gained interest in recent times as a promising source-drain stressor material for n type FinFETs (Fin Field Effect Transistors). They are touted to provide excellent conductivity as well as tensile strain. Although the as-grown layers do provide tensile strain, their conductivity exhibits an unfavorable behavior. It reduces with increasing P concentration (P > 1E21 at/cm(3)), accompanied by a saturation in the active carrier concentration. Subjecting the layers to laser annealing increases the conductivity and activates a fraction of P atoms. However, there is also a concurrent reduction in tensile strain (

Yksityiskohdat

AlkuperäiskieliEnglanti
SivutP228-P237
Sivumäärä10
JulkaisuECS Journal of Solid State Science and Technology
Vuosikerta7
Numero5
TilaJulkaistu - 2018
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

Lataa tilasto

Ei tietoja saatavilla

ID: 29743201