Observation of Ga vacancies in silicon -doping superlattices in (001) GaAs

T. Laine, K. Saarinen, J. Mäkinen, P. Hautojärvi, C. Corbel, M.J. Ashwin, R.C. Newman

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8 Sitaatiot (Scopus)

Alkuperäiskieli	Englanti
Sivut	1843
Julkaisu	Applied Physics Letters
Vuosikerta	71
Tila	Julkaistu - 1997
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

Tutkimusalat

@article{76de203a0db04d988152e57dcfa1a8dd,

title = "Observation of Ga vacancies in silicon -doping superlattices in (001) GaAs",

keywords = "compound semiconductor, point defects, compound semiconductor, point defects, compound semiconductor, point defects",

author = "T. Laine and K. Saarinen and J. M{\"a}kinen and P. Hautoj{\"a}rvi and C. Corbel and M.J. Ashwin and R.C. Newman",

year = "1997",

language = "English",

volume = "71",

pages = "1843",

journal = "Applied Physics Letters",

issn = "0003-6951",

}

TY - JOUR

T1 - Observation of Ga vacancies in silicon -doping superlattices in (001) GaAs

AU - Laine, T.

AU - Saarinen, K.

AU - Mäkinen, J.

AU - Hautojärvi, P.

AU - Corbel, C.

AU - Ashwin, M.J.

AU - Newman, R.C.

PY - 1997

Y1 - 1997

KW - compound semiconductor

KW - point defects

KW - compound semiconductor

KW - point defects

KW - compound semiconductor

KW - point defects

M3 - Article

VL - 71

SP - 1843

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -