Observation of Crystalline Oxidized Silicon Phase

Tutkimustuotos: Lehtiartikkeli

Standard

Observation of Crystalline Oxidized Silicon Phase. / Kuzmin, Mikhail; Lehtiö, Juha Pekka; Mäkelä, Jaakko; Yasir, Muhammad; Rad, Zahra Jahanshah; Vuorinen, Esa; Lahti, Antti; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Hedman, Hannu Pekka; Punkkinen, Risto; Lastusaari, Mika; Repo, Päivikki; Savin, Hele.

julkaisussa: Advanced Materials Interfaces, Vuosikerta 6, Nro 6, 1802033, 22.03.2019.

Tutkimustuotos: Lehtiartikkeli

Harvard

Kuzmin, M, Lehtiö, JP, Mäkelä, J, Yasir, M, Rad, ZJ, Vuorinen, E, Lahti, A, Punkkinen, M, Laukkanen, P, Kokko, K, Hedman, HP, Punkkinen, R, Lastusaari, M, Repo, P & Savin, H 2019, 'Observation of Crystalline Oxidized Silicon Phase', Advanced Materials Interfaces, Vuosikerta. 6, Nro 6, 1802033. https://doi.org/10.1002/admi.201802033

APA

Kuzmin, M., Lehtiö, J. P., Mäkelä, J., Yasir, M., Rad, Z. J., Vuorinen, E., ... Savin, H. (2019). Observation of Crystalline Oxidized Silicon Phase. Advanced Materials Interfaces, 6(6), [1802033]. https://doi.org/10.1002/admi.201802033

Vancouver

Kuzmin M, Lehtiö JP, Mäkelä J, Yasir M, Rad ZJ, Vuorinen E et al. Observation of Crystalline Oxidized Silicon Phase. Advanced Materials Interfaces. 2019 maalis 22;6(6). 1802033. https://doi.org/10.1002/admi.201802033

Author

Kuzmin, Mikhail ; Lehtiö, Juha Pekka ; Mäkelä, Jaakko ; Yasir, Muhammad ; Rad, Zahra Jahanshah ; Vuorinen, Esa ; Lahti, Antti ; Punkkinen, Marko ; Laukkanen, Pekka ; Kokko, Kalevi ; Hedman, Hannu Pekka ; Punkkinen, Risto ; Lastusaari, Mika ; Repo, Päivikki ; Savin, Hele. / Observation of Crystalline Oxidized Silicon Phase. Julkaisussa: Advanced Materials Interfaces. 2019 ; Vuosikerta 6, Nro 6.

Bibtex - Lataa

@article{3b000ccf6813498fa345d61dbc53465f,
title = "Observation of Crystalline Oxidized Silicon Phase",
abstract = "Silica phases, SiOx forming at surfaces of various silicon crystals, e.g., Si wafers, nanowires, and nanoparticles via Si oxidation are key building blocks of diverse applications in the fields of electronics, medicine, and photonics for instance. The Si oxidation has been established to produce amorphous SiOx films, and the resulting oxide/silicon structures are prototypical junctions or contacts of amorphous and crystalline materials of which formation and properties have been extensively studied to understand and develop functionality of SiOx/Si in the applications. Here, observation of hitherto undiscovered phase of the SiOx/Si material, which is crystalline without traditional amorphous silica, is presented. The crystalline SiOx/Si structures are produced in vacuum environment via controlled oxidations of Si where O atoms are incorporated beneath the topmost Si layer. Concomitantly some Si atoms are detached from the crystal, and diffuse to the topmost surface, consistent with previous theoretical predictions, retaining still a pure Si-surface type reconstruction and leading to a crystalline stack of Si/SiOx/Si. In addition to providing a well-defined platform to studies of the SiOx/Si system, the found crystalline phase is also hypothesized to decrease amounts of disorder-induced defects in the applications. Presented electrical characterization via carrier-lifetime and capacitor measurements support the hypothesis.",
keywords = "atomic layer deposition, capacitors, defect levels, silica phases, silicon oxidations",
author = "Mikhail Kuzmin and Lehti{\"o}, {Juha Pekka} and Jaakko M{\"a}kel{\"a} and Muhammad Yasir and Rad, {Zahra Jahanshah} and Esa Vuorinen and Antti Lahti and Marko Punkkinen and Pekka Laukkanen and Kalevi Kokko and Hedman, {Hannu Pekka} and Risto Punkkinen and Mika Lastusaari and P{\"a}ivikki Repo and Hele Savin",
year = "2019",
month = "3",
day = "22",
doi = "10.1002/admi.201802033",
language = "English",
volume = "6",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
number = "6",

}

RIS - Lataa

TY - JOUR

T1 - Observation of Crystalline Oxidized Silicon Phase

AU - Kuzmin, Mikhail

AU - Lehtiö, Juha Pekka

AU - Mäkelä, Jaakko

AU - Yasir, Muhammad

AU - Rad, Zahra Jahanshah

AU - Vuorinen, Esa

AU - Lahti, Antti

AU - Punkkinen, Marko

AU - Laukkanen, Pekka

AU - Kokko, Kalevi

AU - Hedman, Hannu Pekka

AU - Punkkinen, Risto

AU - Lastusaari, Mika

AU - Repo, Päivikki

AU - Savin, Hele

PY - 2019/3/22

Y1 - 2019/3/22

N2 - Silica phases, SiOx forming at surfaces of various silicon crystals, e.g., Si wafers, nanowires, and nanoparticles via Si oxidation are key building blocks of diverse applications in the fields of electronics, medicine, and photonics for instance. The Si oxidation has been established to produce amorphous SiOx films, and the resulting oxide/silicon structures are prototypical junctions or contacts of amorphous and crystalline materials of which formation and properties have been extensively studied to understand and develop functionality of SiOx/Si in the applications. Here, observation of hitherto undiscovered phase of the SiOx/Si material, which is crystalline without traditional amorphous silica, is presented. The crystalline SiOx/Si structures are produced in vacuum environment via controlled oxidations of Si where O atoms are incorporated beneath the topmost Si layer. Concomitantly some Si atoms are detached from the crystal, and diffuse to the topmost surface, consistent with previous theoretical predictions, retaining still a pure Si-surface type reconstruction and leading to a crystalline stack of Si/SiOx/Si. In addition to providing a well-defined platform to studies of the SiOx/Si system, the found crystalline phase is also hypothesized to decrease amounts of disorder-induced defects in the applications. Presented electrical characterization via carrier-lifetime and capacitor measurements support the hypothesis.

AB - Silica phases, SiOx forming at surfaces of various silicon crystals, e.g., Si wafers, nanowires, and nanoparticles via Si oxidation are key building blocks of diverse applications in the fields of electronics, medicine, and photonics for instance. The Si oxidation has been established to produce amorphous SiOx films, and the resulting oxide/silicon structures are prototypical junctions or contacts of amorphous and crystalline materials of which formation and properties have been extensively studied to understand and develop functionality of SiOx/Si in the applications. Here, observation of hitherto undiscovered phase of the SiOx/Si material, which is crystalline without traditional amorphous silica, is presented. The crystalline SiOx/Si structures are produced in vacuum environment via controlled oxidations of Si where O atoms are incorporated beneath the topmost Si layer. Concomitantly some Si atoms are detached from the crystal, and diffuse to the topmost surface, consistent with previous theoretical predictions, retaining still a pure Si-surface type reconstruction and leading to a crystalline stack of Si/SiOx/Si. In addition to providing a well-defined platform to studies of the SiOx/Si system, the found crystalline phase is also hypothesized to decrease amounts of disorder-induced defects in the applications. Presented electrical characterization via carrier-lifetime and capacitor measurements support the hypothesis.

KW - atomic layer deposition

KW - capacitors

KW - defect levels

KW - silica phases

KW - silicon oxidations

UR - http://www.scopus.com/inward/record.url?scp=85061045682&partnerID=8YFLogxK

U2 - 10.1002/admi.201802033

DO - 10.1002/admi.201802033

M3 - Article

VL - 6

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 6

M1 - 1802033

ER -

ID: 32216664