Nitrogen-doped carbon nanotubes under electron irradiation simulated with a tight-binding model

T. Loponen*, A. V. Krasheninnikov, M. Kaukonen, Risto Nieminen

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArticleScientificvertaisarvioitu

18 Sitaatiot (Scopus)
16 Lataukset (Pure)

Abstrakti

Experiments show that nitrogen-doped carbon nanotubes subjected to the electron beam in a transmission electron microscope can easily lose dopant atoms and that overall they are less stable under electron irradiation than the pristine tubes. To understand the lower stability of nitrogen-doped nanotubes we use a density-functional-theory-based tight-binding model and simulate impacts of energetic electrons onto the nanotubes. We show that the dopant atom displacement energy and thus the electron threshold energy is lower for nanotubes with smaller diameter and that, independent of the nanotube diameter, the dopant nitrogen atoms can be displaced more easily than the host carbon atoms. Our results set a limit on the threshold electron energy for damage production in N-doped tubes and indicate that spatially localized electron irradiation of doped nanotubes can be used for local atomic and band structure engineering.

AlkuperäiskieliEnglanti
Artikkeli073409
Sivut1-4
JulkaisuPhysical Review B
Vuosikerta74
Numero7
DOI - pysyväislinkit
TilaJulkaistu - 2006
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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