New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

  • A. Bouravleuv
  • I. Ilkiv
  • R. Reznik
  • K. Kotlyar
  • I. Soshnikov
  • G. Cirlin
  • P. Brunkov
  • D. Kirilenko
  • L. Bondarenko
  • A. Nepomnyaschiy
  • D. Gruznev
  • A. Zotov
  • A. Saranin
  • Veer Dhaka
  • Harri Lipsanen

Organisaatiot

  • St. Petersburg Academic University
  • Ioffe Institute
  • Institute for Analytical Instrumentation
  • St. Petersburg State Electrotechnical University
  • St. Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO)
  • Institute of Automation and Control Processes FEB RAS

Kuvaus

We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes and the diameters of the grown nanowires.

Yksityiskohdat

AlkuperäiskieliEnglanti
Artikkeli045602
Sivumäärä12
JulkaisuNanotechnology
Vuosikerta29
Numero4
TilaJulkaistu - 2017
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 16809557