Nanostructured germanium with >99% absorption at 300-1600 nm wavelengths

Tutkimustuotos: Lehtiartikkelivertaisarvioitu

Tutkijat

Organisaatiot

  • Universitat de Vic – Universitat Central de Catalunya

Kuvaus

Near-infrared (NIR) sensors find numerous applications within various industry fields, including optical communications and medical diagnostics. However, the state-of-the-art NIR sensors made of germanium (Ge) suffer from rather poor response, largely due to high reflection from the illuminated device surface. This work demonstrates a method to increase the sensitivity of Ge sensors by implementing nanostructures to the wafer surfaces. The absorbance of nanostructured Ge wafers is measured to be >99 % in the whole UV-VIS-NIR spectrum up to 1600 nm wavelength, which is a significant improvement to bare Ge wafers that reach absorption of only 63 % in maximum. The process is shown to be capable of producing uniform nanostructures covering full 100-mm-diameter substrates as well as wafers with etch mask openings of different sizes and shapes, which demonstrates its applicability to CMOS sensor manufacturing. The results imply that nanostructured Ge has potential to revolutionize the sensitivity of Ge-based sensors.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivumäärä16
JulkaisuADVANCED OPTICAL MATERIALS
Varhainen verkossa julkaisun päivämäärä29 maaliskuuta 2020
TilaSähköinen julkaisu (e-pub) ennen painettua julkistusta - 29 maaliskuuta 2020
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 41495835