Nanocrystalline thin films synthesized from a Ti2AlN compound target by high power impulse magnetron sputtering technique
- Pusan National University
- Guangdong University of Technology
- Chinese Academy of Sciences
Ti-Al-N thin films were synthesized utilizing a high power impulse magnetron sputtering (HIPIMS) from a Ti2AlN compound target. The deposition temperatures and bias voltages were varied in the range of room temperature (RT) to 450°C and 0V to -70V, respectively. It was indicated that amorphous films formed at low deposition temperatures of RT and 300°C, which changed into MAX-phase Ti2AlN films after vacuum annealing at 800°C for 1h. Densely packed nano-fibrous crystalline films mainly composing of Ti2AlN MAX phase and tetragonal Ti2N phase were acquired at deposition temperature of 450°C, which exhibited stable film structure during vacuum annealing at 800°C. The Ti2AlN-Ti2N composite films exhibited excellent oxidation and corrosion resistance, as compared to (Ti,Al)N film having same Ti/Al ratio and/or TiN film synthesized by a hybrid coating system with HIPIMS and DC pulse magnetron sputtering. The mechanical properties of the Ti2AlN-Ti2N films were also investigated in this work.
|Julkaisu||Surface and Coatings Technology|
|Tila||Julkaistu - marraskuuta 2012|
|OKM-julkaisutyyppi||A1 Julkaistu artikkeli, soviteltu|