Nanocrystalline thin films synthesized from a Ti2AlN compound target by high power impulse magnetron sputtering technique

Tutkimustuotos: Lehtiartikkeli

Tutkijat

  • Teng Fei Zhang
  • Qi Min Wang
  • Junghoon Lee
  • Peiling Ke
  • Roman Nowak

  • Kwang Ho Kim

Organisaatiot

  • Pusan National University
  • Guangdong University of Technology
  • Chinese Academy of Sciences

Kuvaus

Ti-Al-N thin films were synthesized utilizing a high power impulse magnetron sputtering (HIPIMS) from a Ti2AlN compound target. The deposition temperatures and bias voltages were varied in the range of room temperature (RT) to 450°C and 0V to -70V, respectively. It was indicated that amorphous films formed at low deposition temperatures of RT and 300°C, which changed into MAX-phase Ti2AlN films after vacuum annealing at 800°C for 1h. Densely packed nano-fibrous crystalline films mainly composing of Ti2AlN MAX phase and tetragonal Ti2N phase were acquired at deposition temperature of 450°C, which exhibited stable film structure during vacuum annealing at 800°C. The Ti2AlN-Ti2N composite films exhibited excellent oxidation and corrosion resistance, as compared to (Ti,Al)N film having same Ti/Al ratio and/or TiN film synthesized by a hybrid coating system with HIPIMS and DC pulse magnetron sputtering. The mechanical properties of the Ti2AlN-Ti2N films were also investigated in this work.

Yksityiskohdat

AlkuperäiskieliEnglanti
Sivut199-206
Sivumäärä8
JulkaisuSurface and Coatings Technology
Vuosikerta212
TilaJulkaistu - marraskuuta 2012
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

ID: 4850496