N-Type induced junction black silicon photodiode for UV detection

Mikko A. Juntunen, Juha Heinonen, Hannu S. Laine, Ville Vähänissi, Päivikki Repo, Anna Vaskuri, Hele Savin*

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Artikkeli kirjassa/konferenssijulkaisussaConference contributionScientificvertaisarvioitu

4 Sitaatiot (Scopus)
166 Lataukset (Pure)

Abstrakti

Commercial photodiodes suffer from reflection losses and different recombination losses that reduce the collection efficiency. Recently, we realized a near-ideal silicon photodiode that exhibits an external quantum efficiency above 95% over the wavelength range of 235-980 nm, exceeds 100% below 300nm, and provides a very high response at incident angles of up to 70 degrees. The high quantum efficiency is reached by 1) virtually eliminating front surface reflectance by forming a "black silicon" nanostructured surface having dimensions proportional to the wavelength of light to be detected and 2) using an induced junction for signal collection instead of a conventional doped p-n junction, virtually eliminating Auger recombination at the light entry surface. This recombination prevention is especially important in ultraviolet detection since ultraviolet photons are absorbed very close to device surface, where conventional photodiodes have high doping concentration causing loss of signal, but induced junction diode is able to collect virtually all charge carriers generated. In this paper, we analyse the performance of our photodiodes under ultraviolet radiation.

AlkuperäiskieliEnglanti
OtsikkoIntegrated Photonics: Materials, Devices, and Applications IV
Sivumäärä7
ISBN (elektroninen)9781510609990
DOI - pysyväislinkit
TilaJulkaistu - 2017
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
TapahtumaIntegrated Photonics: Materials, Devices, and Applications - Barcelona, Espanja
Kesto: 9 toukokuuta 201710 toukokuuta 2017

Julkaisusarja

NimiProceedings of SPIE
Vuosikerta10249
ISSN (painettu)0277-786X
ISSN (elektroninen)1996-756X

Conference

ConferenceIntegrated Photonics: Materials, Devices, and Applications
MaaEspanja
KaupunkiBarcelona
Ajanjakso09/05/201710/05/2017

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  • Siteeraa tätä

    Juntunen, M. A., Heinonen, J., Laine, H. S., Vähänissi, V., Repo, P., Vaskuri, A., & Savin, H. (2017). N-Type induced junction black silicon photodiode for UV detection. teoksessa Integrated Photonics: Materials, Devices, and Applications IV [102490I] (Proceedings of SPIE ; Vuosikerta 10249). https://doi.org/10.1117/12.2265868